Kingston Technology KHX8500S3ULK2/4G, 4GB 1066MHz DDR3 KHX8500S3ULK2/4G Scheda Tecnica

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KHX8500S3ULK2/4G
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Memory Module Specification
Document No. 4805074-001.A00
10/16/08
Page 1
DESCRIPTION:
Kingston's KHX8500S3ULK2/4G is a kit of two 256M x 64-bit 2GB (2048MB) PC3-8500 CL5 SDRAM (Synchronous
DRAM) memory modules. Each module is based on sixteen 128M x 8-bit DDR3 FBGA components. Total kit capacity
is 4GB (4096MB). The SPDs are programmed to JEDEC ultra low latency timing of 5-5-5-15 at 1.5V. Each
204-pin SODIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications are as
follows:
FEATURES:
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
533MHz fCK for 1066Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 5,6,7,8
Posted CAS
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 5(DDR3-1066)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C
Asynchronous Reset
PCB : Height 1.180” (30.00mm), double  sided  component
PERFORMANCE:
CL(IDD)
5 cycles
Row Cycle Time (tRCmin)
50.625ns (min.)
Refresh to Active/Refresh Command Time (tRFCmin)
110ns
Row Active Time (tRASmin)
37.5ns (min.)
Power
1.680 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 85
o
 C
Storage Temperature
-55
o
 C to +100
o
 C
T E C H N O L O G Y
KHX8500S3ULK2/4G
4GB (2GB 256M x 64-Bit x 2 pcs.)
PC3-8500 CL5 204-Pin SODIMM Kit