Kingston Technology 2GB, 1333MHz, DDR3, ECC Reg w/Parity, CL9, DIMM, Single Rank, x4 w/Therm Sen KVR1333D3S4R9S/2G 데이터 시트
제품 코드
KVR1333D3S4R9S/2G
Memory Module Specifications
KVR1333D3S4R9S/2G
2GB 256M x 72-Bit PC3-10600
CL9 Registered w/Parity 240-Pin DIMM
CL9 Registered w/Parity 240-Pin DIMM
Kingston.com
Document No. VALUERAM0770-001.A00 04/10/09 Page 1
DESCRIPTION
This document describes ValueRAM’s 256M x 72-bit 2GB
(2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM)
registered w/parity, single-rank memory module, based on
eighteen 256M x 4-bit DDR3-1333 FBGA components. The
SPD is programmed to JEDEC standard latency 1333Mhz
timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact
fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:
(2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM)
registered w/parity, single-rank memory module, based on
eighteen 256M x 4-bit DDR3-1333 FBGA components. The
SPD is programmed to JEDEC standard latency 1333Mhz
timing of 9-9-9 at 1.5V. This 240-pin DIMM uses gold contact
fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 6,7,8,9
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12
or MRS]
not allow seamless read or write [either on the fly using A12
or MRS]
• Bi-directional Differential Data Strobe
• On-DIMM thermal sensor (Grade B)
• Internal(self) calibration : Internal self calibration through ZQ
• On-DIMM thermal sensor (Grade B)
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
110ns
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power
3.885 W (operating)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
Continued >>