Super Talent Technology 4GB DDR3 PC3-10600 1333MHz W1333UB4GV Manual Do Utilizador
Códigos do produto
W1333UB4GV
240-Pin Unbuffered DIMM DDR3 SDRAM
http://www.supertalent.com/oem
Products and Specifications discussed herein are subject to change without notice
2
© 2006 Super Talent Tech., Corporation.
1.0 Feature
•
JEDEC standard 1.5V ± 0.075V Power Supply
•
VDDQ = 1.5V ± 0.075V
•
Programmable CAS latencies 6,7,8,9,10,11,13
•
Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
•
Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866)
•
400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for
1600Mb/sec/pin, 900MHz fCK for 1866Mb/sec/pin
1600Mb/sec/pin, 900MHz fCK for 1866Mb/sec/pin
•
Bi-directional Differential Data Strobe
•
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either On the fly using A12 or MRS]
read or write [either On the fly using A12 or MRS]
•
On-Die termination using ODT pin
•
8 independent internal bank
•
Asynchronous Reset
•
Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
•
Serial presence detect with EEPROM
•
DIMM Dimension (Nominal) 30.00 mm high, 133.35 mm wide
•
Based on JEDEC standard reference Raw Cards Lay out.
•
RoHS compliant
•
Gold plated contacts
2.0 Ordering Information
Part number
Density
Module
Organization
Component
composition
Component
PKG
Module
Rank
Description
W1333UB4GV 4GB 512Mx64 256Mx8*16 TFBGA
2
4GB 2Rx8 PC3-
10600U
3.0 Key Timing Parameters
DDR3-1333
Unit
CL-tRCD-tRP
9-9-9
tCK
CAS Latency
9
tCK
tCK(min)
1.5
ns
tRCD(min)
13.5
ns
tRP(min)
13.5
ns
tRAS(min)
36
ns
tRC(min)
49.5
ns
4.0 Absolute Maximum DC Rating
Symbol
Parameter
Rating
Units
V
in ,
Vout
Voltage on any pin relative to V
SS
-0.4 ~ 1.975
V
V
DD
Voltage on V
DD
&
V
DDQ
supply relative to
V
ss
-0.4 ~ 1.975
V
V
DDQ
Short circuit current
-0.4 ~ 1.975
V
V
DDL
Power dissipation
-0.4 ~ 1.975
V
T
STG
Storage Temperature
-55 ~ + 100
°C