Fairchild Semiconductor N/A KSD363RTU Ficha De Dados

Fairchild Semiconductor

Códigos do produto

KSD363RTU

©2000 Fairchild Semiconductor International

Rev. A, February 2000

KSD363

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25

°

C unless otherwise noted

Electrical Characteristics

T

C

=25

°

C unless otherwise noted

h

FE

Classification

Symbol

Parameter

Value

Units

V

CBO

Collector-Base Voltage

300

V

V

CEO

Collector-Emitter Voltage

120

V

V

EBO

Emitter-Base Voltage

8

V

I

C

Collector Current

6

A

P

C

Collector Dissipation (T

C

=25

°

C)

40

W

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

- 55 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BV

CBO

Collector-Base Breakdown Voltage

I

C

=1mA, I

E

= 0

300

V

BV

CEO

Collector-Emitter Breakdown Voltage

I

C

= 20mA, I

B

= 0

120

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

= 1mA, I

C

= 0

8

V

I

CBO

Collector Cut-off Current

V

CB

= 250V, I

E

= 0

1

mA

h

FE

DC Current Gain

V

CE

= 5V, I

C

= 1A

40

240

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

= 1A, I

B

= 0.1A

1

V

V

BE

(sat)

Base-Emitter Saturation Voltage

I

C

= 1A, I

B

= 0.1A

1.5

V

f

T

Current Gain Bandwidth Product

V

CE

= 5V, I

C

= 0.5A

10

MHz

Classification

R

O

Y

h

FE

40 ~ 80

70 ~ 140

120 ~ 240

KSD363

B/W TV Horizontal Deflection Output

• Collector-Base Voltage : V

CBO

=300V

• Collector Current : I

C

=6A

• Collector Dissipation : P

C

=40W(T

C

=25

°

C)

1.Base 2.Collector 3.Emitter

1

TO-220