Fairchild Semiconductor N/A SS9012GTA Ficha De Dados
Códigos do produto
SS9012GTA
©2002 Fairchild Semiconductor Corporation
Rev. A4, November 2002
S
S
9012
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
h
FE
Classification
Symbol
Parameter
Ratings
Units
V
CBO
Collector-Base Voltage
-40
V
V
CEO
Collector-Emitter Voltage
-20
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-500
mA
P
C
Collector Power Dissipation
625
mW
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
-55 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
I
C
= -100
µ
A, I
E
=0
-40
V
BV
CEO
Collector-Emitter Breakdown Voltage
I
C
= -1mA, I
B
=0
-20
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= -100
µ
A, I
C
=0
-5
V
I
CBO
Collector Cut-off Current
V
CB
= -25V, I
E
=0
-100
nA
I
EBO
Emitter Cut-off Current
V
EB
= -3V, I
C
=0
-100
nA
h
FE1
h
FE2
DC Current Gain
V
CE
= -1V, I
C
= -50mA
V
CE
= -1V, I
C
= -500mA
64
40
40
120
90
202
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -500mA, I
B
= -50mA
-0.18
-0.6
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= -500mA, I
B
= -50mA
-0.95
-1.2
V
V
BE
(on)
Base-Emitter On Voltage
V
CE
= -1V, I
C
= -10mA
-0.6
-0.67
-0.7
V
Classification
D
E
F
G
H
h
FE1
64 ~ 91
78 ~ 112
96 ~ 135
112 ~ 166
144 ~ 202
1. Emitter 2. Base 3. Collector
SS9012
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
Class B Push-pull Operation.
• High total power dissipation. (P
T
=625mW)
• High Collector Current. (I
C
= -500mA)
• Complementary to SS9013
• Excellent h
• Excellent h
FE
linearity.
TO-92
1