Fairchild Semiconductor N/A MJD32CTF Ficha De Dados
Códigos do produto
MJD32CTF
©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD32/
32C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
* Pulse Test: PW
≤
300
µ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
: MJD32
: MJD32C
: MJD32C
- 40
- 100
V
V
V
V
CEO
Collector-Emitter Voltage
: MJD32
: MJD32C
: MJD32C
- 40
- 100
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 3
A
I
CP
Collector Current (Pulse)
- 5
A
I
B
Base Current
- 1
A
P
C
Collector Dissipation (T
C
=25
°
C)
15
W
Collector Dissipation (T
a
=25
°
C)
1.56
W
T
J
Junction Temperature
150
°
C
T
STG
Storage Temperature
- 65 ~ 150
°
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: MJD32
: MJD32C
: MJD32C
I
C
= - 30mA, I
B
= 0
-40
-100
V
V
V
I
CEO
Collector Cut-off Current
: MJD32
: MJD32C
: MJD32C
V
CE
= - 40V, I
B
= 0
V
CE
= - 60V, I
B
= 0
-50
-50
-50
µ
A
µ
A
I
CES
Collector Cut-off Current
: MJD32
: MJD32C
: MJD32C
V
CE
= - 40V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
-20
-20
-20
µ
A
µ
A
I
EBO
Emitter Cut-off Current
V
BE
= - 5V, I
C
= 0
-1
mA
h
FE
* DC Current Gain
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
25
10
10
50
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 3, I
B
= - 375mA
-1.2
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= - 4A, I
C
= - 3A
-1.8
V
f
T
Current Gain Bandwidth Product
V
CE
= -10V, I
C
= - 500mA
3
MHz
MJD32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
Switching Applications
D-PAK for Surface Mount Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP32 and TIP32C
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP32 and TIP32C
1.Base 2.Collector 3.Emitter
D-PAK
I-PAK
1
1