Kingston Technology 6GB, 1066MHz, DDR3, ECC Reg, CL7, DIMM (Kit of 3) SR, x4 w/Thrm Sen (Intel) KVR1066D3S4R7SK3/6GI Ficha De Dados
Códigos do produto
KVR1066D3S4R7SK3/6GI
Memory Module Specifications
KVR1066D3S4R7SK3/6GI
6GB (2GB 256M x 72-Bit x 3 pcs.) PC3-8500
CL7 Registered w/Parity 240-Pin DIMM Kit
CL7 Registered w/Parity 240-Pin DIMM Kit
Kingston.com
Document No. VALUERAM0771-001.A00 04/13/09 Page 1
DESCRIPTION
ValueRAM’s KVR1066D3S4R7SK3/6GI is a kit of three 256M x
72-bit 2GB (2048MB) DDR3-1066 CL7 SDRAM (Synchronous
DRAM), Intel
72-bit 2GB (2048MB) DDR3-1066 CL7 SDRAM (Synchronous
DRAM), Intel
®
Compatibility Tested, registered w/parity, single-
rank memory modules, based on eighteen 256M x 4-bit DDR3-
1066 FBGA components per module. Total kit capacity is 6GB
(6144MB). Each SPD is programmed to JEDEC standard latency
1066Mhz timing of 7-7-7 at 1.5V. Each 240-pin DIMM uses gold
contact fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:
1066 FBGA components per module. Total kit capacity is 6GB
(6144MB). Each SPD is programmed to JEDEC standard latency
1066Mhz timing of 7-7-7 at 1.5V. Each 240-pin DIMM uses gold
contact fingers and requires +1.5V. The electrical and mechanical
specifications are as follows:
FEATURES
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 4 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
• VDDQ = 1.5V ± 0.075V
• 533MHz fCK for 1066Mb/sec/pin
• 4 independent internal bank
• Programmable CAS Latency: 6,7,8,9,10
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 6(DDR3-1066)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does
not allow seamless read or write [either on the fly using A12 or
MRS]
not allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
• Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
• On-DIMM thermal sensor (Grade B)
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE ≤ 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), double sided component
• PCB : Height 1.180” (30.00mm), double sided component
SPECIFICATIONS
CL(IDD)
7 cycles
Row Cycle Time (tRCmin)
50.625ns (min.)
Refresh to Active/Refresh
110ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
37.5ns (min.)
Power
3.195 W (operating per module)
UL Rating
94 V - 0
Operating Temperature
0° C to 85° C
Storage Temperature
-55° C to +100° C
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