Техническая Спецификация для Infineon Technologies KITXMC2GOXMC1100V1TOBO1
XMC1100
XMC1000 Family
Electrical Parameter
Data Sheet
36
V1.4, 2014-05
3.2.5
Flash Memory Parameters
Note: These parameters are not subject to production test, but verified by design and/or
characterization.
Table 16
Flash Memory Parameters
Parameter
Symbol
Values
Unit
Note /
Test Condition
Test Condition
Min.
Typ. Max.
Erase Time per page
t
ERASE
CC
6.8
7.1
7.6
ms
Program time per block
t
PSER
CC
102
152
204
μs
Wake-Up time
t
WU
CC
−
32.2
−
μs
Read time per word
t
a
CC
−
50
−
ns
Data Retention Time
t
RET
CC
10
−
−
years
Max. 100 erase /
program cycles
program cycles
Flash Wait States
1)
1) Flash wait states are automatically inserted by the Flash module during memory read when needed. Typical
values are calculated from the execution of the Dhrystone benchmark program.
N
WSFLASH
CC
0
0.5
−
f
MCLK
= 8 MHz
0
1.4
−
f
MCLK
= 16 MHz
1
1.9
−
f
MCLK
= 32 MHz
Erase Cycles per page
N
ECYC
CC
−
−
5*10
4
cycles
Total Erase Cycles
N
TECYC
CC
−
−
2*10
6
cycles
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