Техническая Спецификация для Infineon Technologies N/A BCR 191 PNP Case type SOT 23 I(C) BCR191
Модели
BCR191
2011-08-30
1
BCR191...
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R
1
= 22 k
Ω , R
2
= 22 k
Ω )
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
• Qualified according AEC Q101
BCR191
BCR191W
BCR191W
EHA07183
3
2
1
C
E
B
R
1
R
2
Type
Marking
Pin Configuration
Package
BCR191
BCR191W
BCR191W
WOs
WOs
WOs
1=B
1=B
1=B
2=E
2=E
2=E
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
SOT23
SOT323
SOT323
Maximum Ratings
Parameter
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V
CEO
50
V
Collector-base voltage
V
CBO
50
Input forward voltage
V
i(fwd)
60
Input reverse voltage
V
i(rev)
10
Collector current
I
C
100
mA
Total power dissipation-
BCR191, T
BCR191, T
S
≤ 102°C
BCR191W, T
S
≤ 124°C
P
tot
200
250
250
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
-65 ... 150