Техническая Спецификация для Intel E3815 FH8065301567411

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Intel
®
 Atom™ Processor E3800 Product Family
286
Datasheet
12.3.4
DTR2—Offset 3h
DRAM Timing Register 2
27:26
0h
RO
Rsvd_27_26_DTR1: 
Reserved
25:24
2h
RW
tRRD: 
Row Activation to Row Activation Delay. The minimal time interval between 2 ACT 
commands to any bank in the same DRAM device. Limits peak current profile. 00 - 4 
DRAM Clocks (1KB page DDR3-800, 1066, 1333) (2KB page DDR3-800, LPDDR2-800) 
01 - 5 DRAM Clocks (1KB page DDR3-1600) (2KB page DDR3-1333) 10 - 6 DRAM Clocks 
(2KB page DDR3-1066, 1600. LPDDR3-1333) 11 - 7 DRAM Clocks 
23:20
6h
RW
tRAS: 
Row Activation Period. The minimal delay, in DRAM clocks, between ACT 
command and PRE command to same bank. At least equal to tRCD + tCWL + tCCD + 
tWR 0h -14 DRAM Clocks. 0h - Reserved 1h - 15 DRAM Clocks (DDR3-800) 2h - 16 
DRAM Clocks 3h - 17 DRAM Clocks (LPDRR2-800) 4h - 18 DRAM Clocks 5h - 19 DRAM 
Clocks 6h - 20 DRAM Clocks (DDR3-1066) 7h - 21 DRAM Clocks 8h - 22 DRAM Clocks 9h 
- 23 DRAM Clocks (LPDRR2-1066) Ah - 24 DRAM Clocks (DDR3-1333) Bh - 25 DRAM 
Clocks Ch - 26 DRAM Clocks Dh - 27 DRAM Clocks Eh - 28 DRAM Clocks (DDR3-1600. 
LPDRR3-1333) Fh - 29 DRAM Clocks 
19:16
9h
RW
tFAW: 
Four Bank Activation Window. A rolling time-frame, in which a maximum of 4 
ACT commands (per rank) can be sent. Limits peak current profile. 0h - Reserved 1h - 
Reserved 2h - 14 DRAM Clocks 3h - 16 DRAM Clocks (1KB page DDR3-800) 4h - 18 
DRAM Clocks 5h - 20 DRAM Clocks (2KB page DDR3-800) (1KB page DDR3-1066, 1333. 
LPDDR2-800) 6h - 22 DRAM Clocks 7h - 24 DRAM Clocks (1KB page DDR3-1600) 8h - 
26 DRAM Clocks 9h - 28 DRAM Clocks (2KB page DDR3-1066. LPDDR2-1066) Ah - 30 
DRAM Clocks (2KB page DDR3-1333) Bh - 32 DRAM Clocks (2KB page DDR3-1600) Ch - 
34 DRAM Clocks (LPDDR3-1333) Others - Reserved 
15:14
0h
RO
Rsvd_15_14_DTR1: 
Reserved
13:12
0h
RW
tCCD: 
CAS to CAS delay. The minimum delay, in DRAM clocks, between 2 RD/WR 
commands. 0h - 4 DRAM Clocks: Functional mode. (DDR3-800, 1066, 1333, 1600) 
(LPDDR2-800, 1066) (LPDDR3-1333) 1h - 12 DRAM Clocks: DFX stretch mode (x2) 2h - 
18 DRAM Clocks: DFX stretch mode (x4) 3h - Reserved
11:8
3h
RW
tWTP: 
Write to Prechange. The minimum delay, in DRAM clocks, between a WR 
command and a PRE command to the same bank. Value should be computed as 4 + 
tWCL + tWR. 0h - 14 DRAM Clocks (LPDRR2-800) 1h - 15 DRAM Clocks (DDR3-800) 2h 
- 16 DRAM Clocks 3h - 17 DRAM Clocks (LPDDR2-1066) 4h - 18 DRAM Clocks (DDR3-
1066) 5h - 19 DRAM Clocks 6h - 20 DRAM Clocks 7h - 21 DRAM Clocks (DDR3-1333. 
LPDDR3-1333) 8h - 22 DRAM Clocks 9h - 23 DRAM Clocks Ah - 24 DRAM Clocks (DDR3-
1600) Bh - 25 DRAM Clocks Others - Reserved
7:6
0h
RO
Rsvd_7_6_DTR1: 
Reserved
5:4
2h
RW
tCMD: 
Command Transport Duration. The time period, in DRAM clocks, that a command 
occupies the DRAM command bus. 1N is the DDR3 basic requirement. 2N and 3N are 
extended modes for board signal-integrity. 0h - 1 DRAM Clock (1N) 1h - 2 DRAM Clocks 
(2N) 2h - 3 DRAM Clocks (3N) 
3
0h
RO
Rsvd_3_DTR1: 
Reserved
2:0
0h
RW
tWCL: 
CAS Write Latency. The delay, in DRAM clocks, between the internal write 
command and the availability of the first bit of DRAM input data. 0h - 3 DRAM Clocks 
(LPDDR2-800) 1h - 4 DRAM Clocks (LPDDR2-1066) 2h - 5 DRAM Clocks (DDR3-800) 3h 
- 6 DRAM Clocks (DDR3-1066. LPDDR3-1333) 4h - 7 DRAM Clocks (DDR3-1333) 5h - 8 
DRAM Clocks (DDR3-1600) Others - Reserved 
Bit 
Range
Default & 
Access
Field Name (ID): Description