Hynix HMP125U6EFR8C-S6 Merkblatt

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.3 / Nov. 2008                                                                                                                                                                           1

This Hynix unbuffered Dual In-Line Memory Module (DIMM) series consists of 1Gb version E DDR2
SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb
version E based DDR2 Unbuffered DIMM series provide a high performance 8 byte interface in 133.35mm
width form factor of industry standard. It is suitable for easy interchange and addition.

HMP164U6EFR8C-C4/Y5/S6/S5

512MB

64Mx64

4

1

Halogen free

None

HMP112U6EFR8C-C4/Y5/S6/S5

1GB

128Mx64

8

1

Halogen free

None

HMP112U7EFR8C-C4/Y5/S6/S5

1GB

128Mx72

9

1

Halogen free

ECC

HMP125U6EFR8C-C4/Y5/S6/S5

2GB

256Mx64

16

2

Halogen free

None

HMP125U7EFR8C-C4/Y5/S6/S5

2GB

256Mx72

18

2

Halogen free

ECC

•

JEDEC standard Double Data Rate2 Syn-
chrnous DRAMs (DDR2 SDRAMs) with 1.8V +/
- 0.1V Power Supply

•

All inputs and outputs are compatible with 
SSTL_1.8 interface

•

8 Bank architecture

•

Posted  CAS

•

Programmable CAS Latency 3,4,5, 6

•

OCD (Off-Chip Driver Impedance Adjustment)

•

ODT (On-Die Termination)

•

Fully differential clock operations (CK & CK)

•

Programmable Burst Length 4 / 8 with both 
sequential and interleave mode

•

Auto refresh and self refresh supported

•

8192 refresh cycles / 64ms

•

Serial presence detect with EEPROM

•

DDR2 SDRAM Package: 60ball 
FBGA(128Mx8),
 84ball FBGA(64Mx16)

•

133.35 x 30.00 mm form factor

•

RoHS compliant & Halogen-free