Fairchild 2N4123 Benutzerhandbuch
2N4123
NPN General Purpose Amplifier
2N4123
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Symbol
Characteristic
Max
Units
2N4123
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case
83.3
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
200
°
C/W
C
B
E
TO-92
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2001 Fairchild Semiconductor Corporation
2N4123, Rev A