Wintec AMPO SDR 3AMSD133-512M-R Datenbogen

Produktcode
3AMSD133-512M-R
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Memory Module Specifications
 
Wintec Industries, Inc. 675 Sycamore Drive, Milpitas CA 95035. Tel: (408) 856-0500 
Rev. 1.00 7/2/2008 
Specifications are for reference purposes only and are subject to change by Wintec Industries without notice. 
 
 
3AMSD133-512M-R 
168-Pin PC-133 Unbuffered Non-ECC DIMM 
512MB 64M x 64-bit
 
 
 
DESCRIPTION: 
 
This data sheet describes 64Mx64-bit (512MB) PC133 SDRAM (Synchronous DRAM) memory 
module. It contains 16 32Mx8-bit SDRAM devices in TSOP packages. This module uses gold 
plated contact fingers and requires power supply of 3.3V. The electrical and mechanical 
specifications are shown below: 
 
PERFORMANCE: 
 
¾  Clock Cycle Time (tCK)   
 
7.5ns  
¾  Row Cycle Time (tRC)   
 
65ns (min.) 
¾  Row Active Time (tRAS)  
 
45ns (min.) / 100,000ns (max.) 
¾  Active to Read/Write delay (tRCD) 
20ns 
¾  Precharge command period (tRP)  
20ns 
¾  Operating 
Temperature 
  0
°C to +70°C 
LAYOUT: