Transcend 128MB SDRAM PC133 Unbuffer Non-ECC Memory TS16MLS64V6D Benutzerhandbuch

 

Transcend Information Inc.

 

 

5

Voltage on any pin relative to Vss 

V

IN

, V

OUT

 -1.0~4.6  V 

Voltage on V

DD

 supply to Vss 

V

DD

, V

DDQ

 -1.0~4.6 

V 

Storage temperature 

T

STG

 -55~+150 

°C 

Power dissipation 

P

D

 8 

W 

Short circuit current 

I

OS

 50 

mA 

Operating temperature 

T

A

 0~70 

°C 

Note:   Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. 
 

Functional operation should be restricted to recommended operating condition. 

Exposure to higher than recommended voltage for extended periods of time could affect device 
reliability. 

°C)  

Supply voltage 

V

DD

 3.0 3.3 3.6  V 

 

Input high voltage 

V

IH

 2.0 3.0 

V

DD

+0.3 V 

1 

Input low voltage 

V

IL

 -0.3  0  0.8  V 

2 

Output high voltage 

V

OH

 2.4  - 

- 

V IOH=-2mA 

Output low voltage 

V

OL

 -  -  0.4 V IOL=2mA 

Input leakage current (Inputs) 

I

IL

 -10  -  10 uA 

3 

Note:  1. V

IH

 (max) = 5.6V AC. The overshoot voltage duration is 

≤ 3ns. 

2. V

IL

 (min) = -2.0V AC. The undershoot voltage duration is 

≤ 3ns. 

3. Any input 0V 

≤ V

IN 

≤ V

DDQ. 

    Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. 

CAPACITANCE 

°C, f = 1MHz) 

Input capacitance (A

0

~A

11

, BA

0

~ BA

1

) 

Input capacitance (/RAS, /CAS, /WE) 
Input capacitance (CKE0) 
Input capacitance (CLK0, CLK2) 
Input capacitance (/CS0,/CS2) 
Input capacitance (DQM0~DQM7) 
Data input/output capacitance (DQ0~DQ63) 

C

IN1

 

C

IN2

 

C

IN3

 

C

IN4

 

C

IN5

 

C

IN6

 

C

OUT

 

30 
30 
30 
22 
15 

6 
6 

45 
45 
45 
30 
25 

8 
8 

pF 
pF 
pF 
pF 
pF 
pF 
pF