Kingston Technology PnP 8GB DDR3-1600MHz Kit KHX16LS9P1K2/8 Merkblatt

Kingston's KHX16LS9P1K2/8 is a kit of two 512M x 64-bit

(4GB) DDR3L-1600 CL9 SDRAM (Synchronous DRAM) 1Rx8

low voltage memory modules, based on eight 512M x 8-bit

DDR3 FBGA components per module. Total kit capacity is 8GB.

Each module kit has been tested to run at JEDEC DDR3L-1600

at a low latency timing of 9-9-9 at 1.35V. Additional timing

parameters are shown in the PnP Timing Parameters section.

Each 204-pin SODIMM uses gold contact fingers and requires

1.35V or +1.5V. The electrical and mechanical specifications

are as follows:

•

JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~

1.575V) Power Supply

•

VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

•

800MHz fCK for 1600Mb/sec/pin

•

8 independent internal bank

•

Programmable CAS Latency: 11, 10, 9, 8, 7, 6

•

Posted CAS

•

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

•

Programmable CAS Write Latency(CWL) = 8 (DDR3-1600)

•

8-bit pre-fetch

•

Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]

•

Bi-directional Differential Data Strobe

•

Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)

•

On Die Termination using ODT pin

•

Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C

•

Asynchronous Reset

•

PCB : Height 1.180” (30.00mm), double  sided  component

Memory Module Specifi cations

8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.)
DDR3L-1600 CL9 204-Pin SODIMM Kit
Supports Kingston HyperX Plug and Play (PnP)

•

DDR3-1600 CL9-9-9 @1.35V or 1.5V

•

DDR3-1333 CL8-8-8 @1.35V or 1.5V

•

DDR3-1066 CL6-6-6 @1.35V or 1.5V

Note:  PnP implementation is only possible in configurations that
include a BIOS that supports the PnP function. Your maximum
speed will be determined by your BIOS.

Continued >>

CL(IDD)

9 cycles

Row Cycle Time (tRCmin)

48.125ns (min.)

Refresh to Active/Refresh

260ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin)

33.75ns (min.)

Maximum Operating Power

TBD W* (per module)

(DDR3-1600 CL9-9-9 @ 1.35V)

UL Rating

94 V - 0

Operating Temperature

0

o

 C to 85

o

 C

Storage Temperature

-55

o

 C to +100

o

 C

*Power will vary depending on the SDRAM used.