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Super Talent Technology 2GB PC-10600 W1333SA2GM Benutzerhandbuch

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W1333SA2GM
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204-Pin SODIMM                                                                             DDR3 SDRAM 
 
 
 
 http://www.supertalent.com/oem                            
                            Products and Specifications discussed herein are subject to change without notice 
 
                                  
2                                           
© 2006 Super Talent Tech., Corporation.
 
1.0 Feature 
 
• 
JEDEC standard 1.5V ± 0.075V Power Supply 
• 
VDDQ = 1.5V ± 0.075V 
• 
Programmable CAS Latency: 5,6,7,8,9,10,11,13 
• 
Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock 
• 
Programmable CAS Write Latency(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) and 9 (DDR3-1866) 
• 
Bi-directional Differential Data Strobe  
• 
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless 
read or write [either On the fly using A12 or MRS] 
• 
On-Die termination using ODT pin 
• 
8 independent internal bank 
• 
400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 
1600Mb/sec/pin, 900MHz fCK for 1866Mb/sec/pin 
• 
Asynchronous Reset 
• 
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless 
read or write [either On the fly using A12 or MRS] 
• 
Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C 
• 
Serial presence detect with EEPROM 
• 
DIMM Dimension (Nominal) 30.00 mm high, 67.60 mm wide 
• 
Based on JEDEC standard reference Raw Cards Lay out. 
• 
RoHS compliant 
• 
Gold plated contacts 
 
 
2.0 Ordering Information 
 
Part number 
Density 
Module 
Organization 
Component 
composition 
Component 
PKG 
Module 
Rank 
Description 
W1333SA2Gx 
2GB 
256Mx64 256Mx8*8 TFBGA 1 
2GB 
1Rx8 
PC3-10600U 
Note: Last Character x of the Part Number stand for DRAM vendor 
S=Samsung; M=Micron; H=Hynix 
 
3.0 Key Timing Parameters 
 
DDR3-1333 
Unit 
CL-tRCD-tRP 9-9-9 
tCK 
CAS Latency 
9 
tCK 
tCK(min) 1.5 
ns 
tRCD(min) 13.5 
ns 
tRP(min) 13.5 
ns 
tRAS(min) 36 
ns 
tRC(min) 49.5 
ns 
 
4.0 Absolute Maximum DC Rating 
 
Symbol 
Parameter 
Rating 
Units 
V
in , 
Vout 
Voltage on any pin relative to V
SS
 
-0.4 ~ 1.975 
V 
V
DD 
 
Voltage on V
DD 
&
 
V
DDQ
 
supply relative to
 
V
ss
 
-0.4 ~ 1.975 
V 
V
DDQ
 
Short circuit current
 
-0.4 ~ 1.975 
V 
V
DDL
 Power 
dissipation
 
-0.4 ~ 1.975 
V 
T
STG
 
Storage Temperature 
-55 ~ + 100 
°C