Intel E5-2640 v3 BX80644E52640V3 Benutzerhandbuch

180

Intel® Xeon® Processor E5-1600/E5-2600/E5-4600 Product Families

Datasheet Volume One

1.

V

TT

 refers to instantaneous V

TT

.

2.

Measured at 0.31*V

TT

3.

Vin between 0V and V

TT

4.

Refer to the appropriate Platform Design Guide (PDG) for routing design guidelines.

R

ON

Buffer On Resistance
Signals SVIDCLK, SVIDDATA

14

Ω

2

I

IL

Input Leakage Current
Signals SVIDCLK, SVIDDATA

±900

μA

3,4

I

IL

Input Leakage Current
Signal SVIDALERT_N

±500

μA

3,4

Input Edge Rate
Signals: CAT_ERR_N, MEM_HOT_C{01/23}_N, 

PMSYNC, PROCHOT_N, PWRGOOD, RESET_N

0.05

V/ns

4,5

V

IL_CMOS1.05v

Input Low Voltage

0.3*V

TT

V

1,2

V

IH_CMOS1.05v

Input High Voltage 

0.7*V

TT

V

1,2

V

IL_MAX

Input Low Voltage 
Signal PWRGOOD

0.320

V

1,2,5,

V

IH_MIN

Input High Voltage 
Signal PWRGOOD

0.640

V

1,2,5

V

OL_CMOS1.05v

Output Low Voltage

0.12*V

TT

V

1,2

V

OH_CMOS1.05v

Output High Voltage

0.88*V

TT

V

1,2

I

IL_CMOS1.05v

Input Leakage Current

±50

mA

1,2

I

O_CMOS1.05v

Output Current
(R

TEST

 = 500 ohm)

±1.50

mA

1,2

A

NM_Rise

Non-Monotonicity Amplitude, Rising Edge 
Signal PWRGOOD

0.135

V

5

A

NM_Fall

Non-Monotonicity Amplitude, Falling Edge 
Signal PWRGOOD

0.165

V

5

V

IL_ODCMOS

Input Low Voltage

0.3*V

TT

V

1,2

V

IH_ODCMOS

Input High Voltage 

0.7*V

TT

V

1,2

V

OH_ODCMOS

Output High Voltage
Signals: CAT_ERR_N, ERROR_N[2:0], 

THERMTRIP_N, PROCHOT_N, CPU_ONLY_RESET

V

TT(max)

V

1,2

I

OL

Output Leakage Current,
Signal MEM_HOT_C{01/23}_N

±100

mA

3

I

OL

Output Leakage Current
(R

TEST

 = 50 ohm)

±900

mA

3

R

ON

Buffer On Resistance
Signals: CAT_ERR_N, CPU_ONLY_RESET, 

ERROR_N[2:0], MEM_HOT_C{01/23}_N,
PROCHOT_N, THERMTRIP_N

14

W

1,2