Sanken 2SC2837-SKN Merkblatt
60
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186)
Application : Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
150
150
5
10
2
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
■
Typical Switching Characteristics (Common Emitter)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Ratings
100
max
100
max
150
min
50
min
∗
2.0
max
70
typ
60
typ
Unit
µ
A
µ
A
V
V
MHz
pF
Conditions
V
CB
=150V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=3V
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–1A
V
CB
=80V, f=1MHz
V
CC
(V)
60
R
L
(
Ω
)
12
I
C
(A)
5
V
B2
(V)
–5
I
B2
(mA)
–500
t
on
(
µ
s)
0.2typ
t
stg
(
µ
s)
1.4typ
t
f
(
µ
s)
0.35typ
I
B1
(mA)
500
LAPT
2SC2837
(Ta=25°C)
(Ta=25°C)
I
C
– V
C E
Characteristics (Typical)
h
F E
– I
C
Characteristics (Typical)
h
F E
– I
C
Temperature
Characteristics (Typical)
θ
j - a
– t
Characteristics
I
C
– V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) – I
B
Characteristics (Typical)
P c – T a Derating
Safe Operating Area (Single Pulse)
f
T
– I
E
Characteristics (Typical)
0
3
2
1
0
0 . 5
1 . 0
2 . 0
1 . 5
B a s e C u r r e n t I
B
( A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
= 1 0 A
5 A
0
1 0
2
6
4
8
0
2
1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125˚C (Case Temp)
25˚C
–30˚C (Case Temp)
0 . 2
1
3
0 . 5
1
1 0
1 0 0
1 0 0 0 2 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
θ
j-a
(˚C/W)
1 0 0
5 0
3 . 5
0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
A m b i e n t T e m p e r a t u r e T a ( ˚ C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
2
1 0
1 0 0
2 0 0
0 . 2
1
0 . 5
1 0
3 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
10ms
DC
Without Heatsink
Natural Cooling
0 . 0 2
0 . 1
1
1 0
2 0
5 0
1 0 0
2 0 0
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
T y p
0
0
2
4
6
1 0
8
2
1
3
4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
3 0 0 m
A
2 0 0 m
A
1 6 0 m
A
1 2 0 m A
8 0 m A
4 0 m A
I
B
= 2 0 m A
4 0
0 m
A
( V
C E
= 4 V )
0 . 0 2
0 . 1
0 . 5
0 . 0 5
1 0
5
1
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
2 0
5 0
1 0 0
2 0 0
1 2 5 ˚ C
2 5 ˚ C
– 3 0 ˚ C
– 0 . 0 2
– 0 . 1
– 1
– 6
4 0
2 0
0
1 2 0
1 0 0
8 0
6 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
T y p
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Part No.
b. Lot No.
a. Part No.
b. Lot No.
∗
h
FE
Rank
O(50 to 100), P(70 to 140), Y(90 to 180)