Texas Instruments IC MCU 16B MSP430G2202IN20 PDIP-20 TID MSP430G2202IN20 Datenbogen
Produktcode
MSP430G2202IN20
MSP430G2x32
MSP430G2x02
MSP430G2x02
SLAS723H – DECEMBER 2010 – REVISED MAY 2013
10-Bit ADC, Temperature Sensor and Built-In V
MID
(MSP430G2x32 Only)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V
CC
MIN
TYP
MAX
UNIT
Temperature sensor supply
REFON = 0, INCHx = 0Ah,
I
SENSOR
3 V
60
µA
current
(1)
T
A
= 25°C
TC
SENSOR
ADC10ON = 1, INCHx = 0Ah
(2)
3 V
3.55
mV/°C
Sample time required if channel
ADC10ON = 1, INCHx = 0Ah,
t
Sensor(sample)
3 V
30
µs
10 is selected
(3)
Error of conversion result
≤
1 LSB
I
VMID
Current into divider at channel 11
ADC10ON = 1, INCHx = 0Bh
3 V
(4)
µA
ADC10ON = 1, INCHx = 0Bh,
V
MID
V
CC
divider at channel 11
3 V
1.5
V
V
MID
≈
0.5 × V
CC
Sample time required if channel
ADC10ON = 1, INCHx = 0Bh,
t
VMID(sample)
3 V
1220
ns
11 is selected
(5)
Error of conversion result
≤
1 LSB
(1)
The sensor current I
SENSOR
is consumed if (ADC10ON = 1 and REFON = 1) or (ADC10ON = 1 and INCH = 0Ah and sample signal is
high). When REFON = 1, I
SENSOR
is included in I
REF+
. When REFON = 0, I
SENSOR
applies during conversion of the temperature sensor
input (INCH = 0Ah).
(2)
The following formula can be used to calculate the temperature sensor output voltage:
V
V
Sensor,typ
= TC
Sensor
(273 + T [°C] ) + V
Offset,sensor
[mV] or
V
Sensor,typ
= TC
Sensor
T [°C] + V
Sensor
(T
A
= 0°C) [mV]
(3)
The typical equivalent impedance of the sensor is 51 k
Ω
. The sample time required includes the sensor-on time t
SENSOR(on)
.
(4)
No additional current is needed. The V
MID
is used during sampling.
(5)
The on-time t
VMID(on)
is included in the sampling time t
VMID(sample)
; no additional on time is needed.
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
V
CC
MIN
TYP
MAX
UNIT
V
CC(PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
f
FTG
Flash timing generator frequency
257
476
kHz
I
PGM
Supply current from V
CC
during program
2.2 V, 3.6 V
1
5
mA
I
ERASE
Supply current from V
CC
during erase
2.2 V, 3.6 V
1
7
mA
t
CPT
Cumulative program time
(1)
2.2 V, 3.6 V
10
ms
t
CMErase
Cumulative mass erase time
2.2 V, 3.6 V
20
ms
Program and erase endurance
10
4
10
5
cycles
t
Retention
Data retention duration
T
J
= 25°C
100
years
t
Word
Word or byte program time
(2)
30
t
FTG
t
Block, 0
Block program time for first byte or word
(2)
25
t
FTG
Block program time for each additional
t
Block, 1-63
(2)
18
t
FTG
byte or word
t
Block, End
Block program end-sequence wait time
(2)
6
t
FTG
t
Mass Erase
Mass erase time
(2)
10593
t
FTG
t
Seg Erase
Segment erase time
(2)
4819
t
FTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word or byte write mode and block write mode.
methods: individual word or byte write mode and block write mode.
(2)
These values are hardwired into the flash controller's state machine (t
FTG
= 1/f
FTG
).
Copyright © 2010–2013, Texas Instruments Incorporated
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