Texas Instruments LM3410 Boost Evaluation Board LM3410XMFLEDEV/NOPB LM3410XMFLEDEV/NOPB Datenbogen
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LM3410XMFLEDEV/NOPB
SNVS541G – OCTOBER 2007 – REVISED MAY 2013
Table 5. Operating Conditions
V
IN
3.3V
V
OUT
16.7V
I
LED
50mA
V
D
0.45V
f
SW
1.60MHz
I
Q
3mA
t
RISE
10nS
t
FALL
10nS
R
DSON
225m
Ω
L
DCR
75m
Ω
D
0.82
I
IN
0.31A
Σ
P
COND
+ P
SW
+ P
DIODE
+ P
IND
+ P
Q
= P
LOSS
(36)
Quiescent Power Loss:
P
Q
= I
Q
x V
IN
= 10 mW
(37)
Switching Power Loss:
P
SWR
= 1/2(V
OUT
x I
IN
x f
SW
x t
RISE
)
≊
40 mW
(38)
P
SWF
= 1/2(V
OUT
x I
IN
x f
SW
x t
FALL
)
≊
40 mW
(39)
P
SW
= P
SWR
+ P
SWF
= 80 mW
(40)
Internal NFET Power Loss:
R
DSON
= 225 m
Ω
(41)
P
CONDUCTION
= I
IN
2
x D x R
DSON
= 17 mW
(42)
I
IN
= 310 mA
(43)
Diode Loss:
V
D
= 0.45V
(44)
P
DIODE
= V
D
x I
LED
= 23 mW
(45)
Inductor Power Loss:
R
DCR
= 75 m
Ω
(46)
P
IND
= I
IN
2
x R
DCR
= 7 mW
(47)
Total Power Losses are:
Table 6. Power Loss Tabulation
V
IN
3.3V
V
OUT
16.7V
I
LED
50mA
P
OUT
825W
V
D
0.45V
P
DIODE
23mW
f
SW
1.6MHz
I
Q
10nS
P
SWR
40mW
t
RISE
10nS
P
SWF
40mW
I
Q
3mA
P
Q
10mW
R
DSON
225m
Ω
P
COND
17mW
L
DCR
75m
Ω
P
IND
7mW
D
0.82
η
85%
P
LOSS
137mW
Copyright © 2007–2013, Texas Instruments Incorporated
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