Texas Instruments BQ27505EVM - BQ27505 System-Side, Single-Cell Impedance Track??? Technology Evaluation Module BQ27505E BQ27505EVM Datenbogen

SLUS884 – FEBRUARY 2009

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

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4.3

MANUFACTURER INFORMATION BLOCKS

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1.1

FEATURES

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4.4

ACCESS MODES

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1.2

APPLICATIONS

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4.5

SEALING/UNSEALING DATA FLASH

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1.3

DESCRIPTION

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4.6

DATA FLASH SUMMARY

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2.1

AVAILABLE OPTIONS

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5.1

FUEL GAUGING

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2.2

DISSIPATION RATINGS

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5.2

IMPEDANCE TRACK™ VARIABLES

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5.3

DETAILED PIN DESCRIPTION

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2.3

PIN ASSIGNMENT

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5.4

TEMPERATURE MEASUREMENT

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5.5

OVERTEMPERATURE INDICATION

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3.1

ABSOLUTE MAXIMUM RATINGS

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5.6

CHARGING AND CHARGE-TERMINATION

3.2

RECOMMENDED OPERATING CONDITIONS

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INDICATION

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3.3

POWER-ON RESET

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5.7

POWER MODES

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3.4

INTERNAL TEMPERATURE SENSOR

5.8

POWER CONTROL

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CHARACTERISTICS

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5.9

AUTOCALIBRATION

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3.5

HIGH-FREQUENCY OSCILLATOR

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3.6

LOW-FREQUENCY OSCILLATOR

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6.1

BATTERY PROFILE STORAGE AND SELECTION

3.7

INTEGRATING ADC (COULOMB COUNTER)

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6.2

APPLICATION-SPECIFIC FLOW AND CONTROL

CHARACTERISTICS

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3.8

ADC (TEMPERATURE AND CELL

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MEASUREMENT) CHARACTERISTICS

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3.9

DATA FLASH MEMORY CHARACTERISTICS

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7.1

I

2

C INTERFACE

3.10

I

2

C-COMPATIBLE INTERFACE COMMUNICATION

7.2

I

2

C Time Out

TIMING CHARACTERISTICS

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7.3

I

2

C Command Waiting time

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7.4

PACKAGE INFORMATION

4.1

DATA COMMANDS

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4.2

DATA FLASH INTERFACE

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8.1

SCHEMATIC

2

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