Texas Instruments THS4513EVM Evaluation Module THS4513EVM THS4513EVM Datenbogen
Produktcode
THS4513EVM
0
1000
2000
3000
4000
5000
6000
0
0.5
1
1.5
2
2.5
3
V
Output Voltage
V
OD
-
-
PP
T
ransitionRate
V/
s
-
m
R = 200
L
W
Rising
Falling
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
0.1
1
10
100
1000
f - Frequency - MHz
s-Parameter-dB
S11
S12
S22
S21
35
40
45
50
30
0
50
100
150
200
f - Frequency - MHz
OIP
-OutputInterceptPoint-dBm
3
V
= 2 Vpp Envelope
OD
200 kHz Tone Spacing
R = 100
R = 100
L
W
45
55
65
75
85
95
0
50
100
150
200
f - Frequency - MHz
OIP
-OutputInterceptPoint-dBm
2
V
= 2 Vpp Envelope
OD
200 kHz Tone Spacing
R = 100
R = 100
L
W
-100
-90
-80
-70
-60
-50
-40
-30
0
50
100
150
200
f - Frequency - MHz
V
= 2 Vpp Envelope
OD
200 kHz Tone Spacing
R
L
= 100 W
R = 1k
L
W
R
L
= 200 W
IMD
-IntermodulationDistortion-dBc
2
-110
-100
-90
-80
-70
-60
0
50
100
150
200
f - Frequency - MHz
V
= 2 Vpp Envelope
OD
200 kHz Tone Spacing
IMD
-IntermodulationDistortion-dBc
3
R = 1K
L
W
R = 100
L
W
R = 200
L
W
SLOS472E – AUGUST 2005 – REVISED JANUARY 2013
TYPICAL CHARACTERISTICS: V
S+
– V
S–
= 5 V (continued)
Test conditions at V
S+
= +2.5 V, V
S–
= –2.5V, CM = open, V
O
= 2 V
PP
, R
F
= 348
Ω
, R
L
= 200-
Ω
differential, G = 0 dB, single-
ended input, and input and output referenced to midsupply, unless otherwise noted.
IMD
2
vs FREQUENCY
IMD
3
vs FREQUENCY
Figure 13.
Figure 14.
OIP
2
vs FREQUENCY
OIP
3
vs FREQUENCY
Figure 15.
Figure 16.
S-PARAMETERS vs FREQUENCY
TRANSITION RATE vs OUTPUT VOLTAGE
Figure 17.
Figure 18.
Copyright © 2005–2013, Texas Instruments Incorporated
11
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