Texas Instruments THS770012 Evaluation Module THS770012EVM THS770012EVM Datenbogen

SLOS669C

–

FEBRUARY 2010

–

REVISED JANUARY 2012

θ

JA

Junction-to-ambient thermal resistance

44.1

θ

JC(top)

Junction-to-case(top) thermal resistance

35

θ

JB

Junction-to-board thermal resistance

19

°

C/W

ψ

JT

Junction-to-top characterization parameter

0.5

ψ

JB

Junction-to-board characterization parameter

18.8

θ

JC(bottom)

Junction-to-case(bottom) thermal resistance

8.9

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report,

Test conditions are at T

A

= +25

°

C, V

S+

= +5V, V

OCM

= +2.5V, V

OUT

= 2V

PP

, R

L

= 400

Ω

differential, G = +12dB, differential input

and output, and input and output referenced to midsupply, unless otherwise noted. Measured using evaluation module as
discussed in

section.

Gain = +10dB, V

OUT

= 200mV

PP

900

MHz

C

Gain = +11dB, V

OUT

= 200mV

PP

810

MHz

C

Small-signal bandwidth

Gain = +12dB, V

OUT

= 200mV

PP

680

MHz

C

Gain = +13.7dB, V

OUT

= 200mV

PP

540

MHz

C

Gain = +10dB, V

OUT

= 2V

PP

845

MHz

C

Gain = +11dB, V

OUT

= 2V

PP

790

MHz

C

Large-signal bandwidth

Gain = +12dB, V

OUT

= 2V

PP

680

MHz

C

Gain = +13.7dB, V

OUT

= 2V

PP

548

MHz

C

Bandwidth for 0.1dB flatness

Gain = +12dB, V

OUT

= 2V

PP

130

MHz

C

V

OUT

= 2V step

3300

V/

µ

s

C

Slew rate

V

OUT

= 4V step

3400

V/

µ

s

C

Rise time

V

OUT

= 2V step

0.6

ns

C

Fall time

V

OUT

= 2V step

0.6

ns

C

Settling time to 0.1%

V

OUT

= 2V step

2.2

ns

C

Input return loss, s11

See

section, f

<

200MHz

–

18

dB

C

Output return loss, s22

See

section, f

<

200MHz

–

16

dB

C

Reverse isolation, s12

See

section, f

<

200MHz

–

60

dB

C

f = 10MHz

–

90

dBc

C

Second-order harmonic

f = 50MHz

–

70

dBc

C

distortion, Gain = +12dB, R

L

=

f = 100MHz

–

73

dBc

C

400

Ω

, V

OUT

= 2V

PP

f = 200MHz

–

74

dBc

C

f = 10MHz

–

100

dBc

C

Third-order harmonic distortion,

f = 50MHz

–

85

dBc

C

Gain = +12dB, R

L

= 400

Ω

, V

OUT

f = 100MHz

–

84

dBc

C

= 2V

PP

f = 200MHz

–

73

dBc

C

f = 50MHz, 10MHz spacing

–

62

dBc

C

Second-order intermodulation

f = 100MHz, 10MHz spacing

–

76

dBc

C

distortion, Gain = +12dB, R

L

=

f = 150MHz, 10MHz spacing

–

78

dBc

C

400

Ω

, V

OUT

= 2V

PP

f = 200MHz, 10MHz spacing

–

78

dBc

C

(1)

Test levels: (A) 100% tested at +25

°

C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and

simulation. (C) Typical value only for information.

Copyright

©

2010

–

2012, Texas Instruments Incorporated

3

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