Texas Instruments TPS23752 Evaluation Module TPS23752EVM-145 TPS23752EVM-145 Datenbogen
Produktcode
TPS23752EVM-145
Bill of Materials
8
Bill of Materials
Table 5. TPS23752EVM-145 Bill of Materials
COUNT
REFDES
VALUE
DESCRIPTION
SIZE
PART NUMBER
SUPPLIER
2
C1, C10
1000 pF
Capacitor, ceramic, 2 kV, X7R, 15%
1210
Std
STD
2
C12, C30
0.1 µF
Capacitor, ceramic, 25 V, X7R, 10%
603
Std
Std
5
C13-14, C32-34
0.47 µF
Capacitor, ceramic, 16 V, X7R, 10%
603
STD
Std
1
C16
47 µF
Capacitor, Aluminum, 63 V, ±20%
0.328 × 0.390 in
EEE-FK1J470P
Panasonic
2
C17-18
1 µF
Capacitor, ceramic, 100 V, X7R, 10%
1210
Std
STD
3
C20-22
47 µF
Capacitor, ceramic, 10 V, X5R, 15%
1210
Std
Std
2
C23-24
330 µF
Capacitor, aluminum, 6.3 V, 20%
0.260 × 0.276 in
EEE-FK0J331XP
Panasonic
6
C2-5, C11, C37
0.01 µF
Capacitor, ceramic, 100 V, X7R, 10%
603
STD
STD
2
C25, C38
1 µF
Capacitor, ceramic, 16 V, X7R, 10%
603
STD
Std
1
C26
2200 pF
Capacitor, ceramic, 2 kV, X7R, 15%
1812
Std
Std
1
C27
22 µF
Capacitor, Aluminum, 25 V, 20%
5 × 5.8 mm
EEE-FK1E220R
Panasonic
1
C29
1 µF
Capacitor, ceramic, 25 V, X7R, 10%
603
STD
Std
1
C31
330 pF
Capacitor, ceramic, 50 V, C0G, 10%
603
STD
Std
0
C35
0.1 µF
Capacitor, ceramic, 50 V, X7R, 10%
603
STD
Std
1
C36
0.022 µF
Capacitor, ceramic, 50 V, X7R, 10%
603
STD
Std
3
C6, C8, C28
1000 pF
Capacitor, ceramic, 100 V, X7R, 10%
603
STD
STD
4
C7, C9, C15, C19
0.1 µF
Capacitor, Ceramic, 100 V, X7R, 10%
805
STD
STD
4
D11-12, D14, D20
LN1371G
Diode, LED, Green, 10 mA, 2.6 mcd
0.114 × 0.049 in
LN1371G
Panasonic
1
D13
MURS120T3G
Diode, ultra-fast rectifier, 1 A, 200 V
SMB
MURS120T3G
On Semi
1
D15
1N4148W-7-F
Diode, signal, 300 mA, 75 V, 350 mW
SOD-123
1N4148W-7-F
Diodes
9
D1-5, D7-10
B2100-13-F
Diode, Schottky, 2 A, 100 V
SMB
B2100-13-F
Diodes
1
D16
MBR0530
Diode, Schottky, 0.5 A, 30 V
SOD-123
MBR0530T1G
On Semi
1
D17
PDS1040
Diode, Schottky, 10 A, 40 V
Power DI 5
PDS1040-13
Diodes, Inc
2
D18-19
BAT54S
Diode, Dual Schottky, 200 mA, 30 V
SOT323
BAT54SWT1G
On Semi
1
D6
SMAJ58A
Diode, TVS, 58-V, 1W
SMA
SMAJ58A-13-F
Diodes
4
FB1-4
500
Bead, ferrite, 2000 mA, 60 m
Ω
1206
MI1206L501R-10
Steward
2
J1-2
5520252-4
Connector, jack, modular, 8 POS
0.705 × 0.820 inch
5520252-4
AMP
2
J3, J10
ED555/2DS
Terminal block, 2 pin, 6 A, 3.5 mm
0.27 × 0.25 inch
ED555/2DS
OST
7
J4-9, J11
PEC02SAAN
Header, male 2 pin, 100 mil spacing
0.100 inch × 2
PEC02SAAN
Sullins
1
L1
3.3uH
Inductor, SMT, 1.9 A, 80 m
Ω
4 × 4 mm
LPS4018-332ML
Coilcraft
1
L2
0.33uH
Inductor, SMT, 19.2 A, 3.52 m
Ω
5.3 × 5.5 mm
XAL5030-331ME
Coilcraft
3
Q1-2, Q7
BSS84
MOSFET, Pch, -50 V, -0.13 A, 10
Ω
SOT23
BSS84LT1C
Infineon
1
Q3
SiR422DP
MOSFET, NChan, 40 V, 40 A, 6.6 m
Ω
PWRPAK S0-8
SIR422DP-T1-GE3
Vishay
1
Q4
MMBT2907A
Trans, PNP, 40 V, 200 mA, 225 mW
SOT23
MMBT2907ALT1G
On Semi
1
Q5
Si7898DP
MOSFET, NChannel, 150 V, 4.8 A, 85 m
Ω
PWRPAK S0-8
SI7898DP-T1-E3
Vishay
1
Q6
MMBT3906
Trans, PNP, 40 V, 200 mA, 225 mW
SOT23
MMBT3906LT1G
On Semi
1
Q8
Si2304DDS
MOSFET, N-ch, 30 V, 3.6 A, 60 m
Ω
SOT23
Si2304DDS
Vishay
1
Q9
MMBT3904
Trans, NPN, 40 V, 200 mA, 225 mW
SOT23
MMBT3904LT1G
On Semi
14
TPS23752EVM-145: Evaluation Module for TPS23752
SLVU753 – July 2012
Copyright © 2012, Texas Instruments Incorporated