Texas Instruments Evaluation Module for UCC28250 Advanced PWM Controller with Pre-Bias Operation UCC28250EVM-501 UCC28250EVM-501 Datenbogen
Produktcode
UCC28250EVM-501
List of Materials
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9
List of Materials
The EVM components list according to the schematic shown in
Table 3. UCC28250EVM-501 List of Materials
REF DES
QTY
DESCRIPTION
MFR
PART NUMBER
C1, C8, C17, C18,
C19, C20, C26,
C19, C20, C26,
13
Capacitor, ceramic, 16 V, X5R, ±10%, 1 µF
std
std
C28, C32, C37,
C38, C41, C43
C38, C41, C43
C10
1
Capacitor, ceramic, 50 V, X7R, ±10%, 470 pF
std
std
C2, C5, C11, C12,
GRM32ER72A225K
8
Capacitor, ceramic, 2.2 µF, 100 V, X7R, ±10%, 1210
Murata
C13, C14, C15, C16
A35
C21, C22
2
Capacitor, ceramic, 16 V, X5R, ±10%, 1.2 µF
std
std
C23
1
Capacitor, ceramic, 1000 pF, 2000 V, ±10%
Johanson Die
202R18W102MV4E
C24, C25
2
Capacitor, ceramic, 16 V, X5R, ±10%, 0.15 µF
std
std
C27, C29
2
Capacitor, POSCAP, 9.0 m
Ω
s, 6.3 V, 20%, 330 µF
Sanyo
6TPF330M9L
C3, C7
2
Capacitor, ceramic, 16 V, X7R, ±10%, 0.1 µF
std
std
C30
1
Capacitor, ceramic, 50 V, NPO, ±10%, 100 pF
std
std
C31
1
Capacitor, ceramic, 50 V, X7R, ±10%, 1 nF
std
std
C33, C42
2
Capacitor, ceramic, 50 V, X7R, 10%, 15 nF
std
std
C34
1
Capacitor, ceramic, 50 V, NPO, 10%, 33 pF
std
std
GRM32ER61C226K
C35, C36, C39, C40
4
Capacitor, ceramic, 22 µF, 16V, X5R, 10%, 1210
Murata
E20
C4
1
Capacitor, ceramic, 16 V, X5R, ±10%, 0.22 µF
std
std
C44
0
Capacitor, ceramic, 16 V, X7R, ±10%, open
std
std
C45
1
Capacitor, ceramic, 16 V, X7R, ±10%, 18 nF
std
std
C46
1
Capacitor, ceramic, 50 V, X7R, ±10%, 5.6 nF
std
std
C47
1
Capacitor, ceramic, 50 V, X7R, ±10%, 0.1 µF
std
std
C6
1
Capacitor, ceramic, 50 V, X7R, ±10%, 470 pF
std
std
C9
1
Capacitor, ceramic, 50 V, X7R, ±10%, 1 nF
std
std
CT1
1
Transformer, current Sense, 20-A, 1:100
Pulse
PA1005.100
D1, D7, D11
3
Diode, Dual Schottky, 300 mA, 30 V
ST
BAT54AFILM
D10
1
Diode, Zener, 8.2 V, 20 mA, 225 mW, 5%
Onsemi
BZX84C7V5LT1G
D12, D13
2
Diode, Schottky, 200 mA, 30 V
Diodes Inc
BAT54-7-F
D2, D8
2
Diode, Dual Schottky, 200 mA, 30 V
Vishay-Liteon
BAT54C
D3, D5
2
Diode, Switching, 75 V, 200 mA, SOT23
Onsemi
BAS16LT1G
D4
1
Diode, Zener, 11 V, 20 mA, 225 mW, 5%
Onsemi
BZX84C11LT1G
D6
1
Diode, Zener, 10 V, 20 mA, 225 mW, 5%
Onsemi
BZX84C10LT1G
D9
1
Adjustable precision shunt regulator, 0.5%
TI
TLV431BQDBZT
J1, J4
2
Terminal block, 4 pin, 15 A, 5.1 mm
OST
ED2227
J2, J3
2
Pin, thru hole, tin plate, for 0.062 PCB's
Vector
K24A/M
IHLP2525CZERR47
L1
1
Inductor, SMT, 26 A, 4.2 m
Ω
, 0.47 µH
Vishay
M01
L2
1
Inductor, power, ±20%, 1.2 µH
Coilcraft
SER2009-122ML
Q1, Q2
2
MOSFET, N-channel, 100 V, 25 A, 10 m
Ω
Renesas
RJK1053DPB
Q11
1
Transistor, PNP, -60 V, -600 mA, 225 W
On Semi
MMBT2907ALT1
Q3, Q10
2
Bipolar, NPN, 40 V
CEO
, 600 mA, 350 mW
Fairchild
MMBT2222AK
Q4
1
Bipolar, NPN, 80 V
CEO
, 500 mA, 350 mW
Fairchild
MMBTA06
Q5, Q6, Q7, Q8
4
MOSFET, N-channel, 40 V, 55 A, 1.9 m
Ω
Renesas
RJK0453DPB
Q9
1
MOSFET, N channel, 60 V, 115 mA, 1.2
Ω
Fairchild
2N7002K
R1, R20, R28, R38,
5
Resistor, chip, 1/16 W, 1%, 10.0 k
Ω
std
std
R48
16
Half-Bridge DC-to-DC Converter With Primary-Side Control
SLUU429B – June 2010 – Revised December 2010
© 2010, Texas Instruments Incorporated