Texas Instruments THS3201 Evaluation Module THS3201EVM THS3201EVM Datenbogen
Produktcode
THS3201EVM
ELECTRICAL CHARACTERISTICS: V
S
= ±7.5 V
SLOS416C – JUNE 2003 – REVISED JUNE 2009
.............................................................................................................................................................
www.ti.com
At R
F
= 768
Ω, R
L
= 100
Ω, and G = +2, unless otherwise noted.
THS3201
TYP
OVER TEMPERATURE
PARAMETER
TEST CONDITIONS
MIN/
0°C to
–40°C to
+25°C
+25°C
UNITS
TYP/
+70°C
+85°C
MAX
AC PERFORMANCE
G = +1, R
F
= 1.2 k
Ω
1.8
GHz
G = +2, R
F
= 768
Ω
850
Small-signal bandwidth, –3 dB
Typ
(V
O
= 200 mV
PP
)
G = +5, R
F
= 619
Ω
565
MHz
G = +10, R
F
= 487
Ω
520
Bandwidth for 0.1 dB flatness
G = +2, V
O
= 200 mV
pp
380
MHz
Typ
Large-signal bandwidth
G = +2, V
O
= 2 V
pp
880
MHz
Typ
G = +2, V
O
= 5-V step, Rise/Fall
5400/4000
Slew rate
V/
µ
s
Typ
G = +2, V
O
= 10-V step, Rise/Fall
9800/6700
Rise and fall time
G = +2, V
O
= 4-V step, Rise/Fall
0.7/0.9
ns
Typ
Settling time to 0.1%
20
G = –2, V
O
= 2-V step
ns
Typ
Settling time to 0.01%
60
Harmonic distortion
R
L
= 100
Ω
–64
dBc
Typ
2
nd
-order harmonic
G = +5, f = 10 MHz,
V
V
O
= 2 V
pp
R
L
= 100
Ω
–73
dBc
Typ
3
rd
-order harmonic
G = +10, f
c
= 20 MHz,
Δf = 1 MHz,
Third-order intermodulation distortion (IMD
3
)
–78
dBc
Typ
V
O(envelope)
= 2 V
pp
G = +10, f
c
= 100 MHz, R
F
= 255
Ω,
Noise figure
11
dB
Typ
R
G
= 28
Input voltage noise
f > 10 MHz
1.65
nV/
√Hz
Typ
Input current noise (noninverting)
13.4
pA/
√Hz
Typ
f > 10 MHz
Input current noise (inverting)
20
pA/
√Hz
Typ
NTSC
0.008%
Typ
Differential gain
PAL
0.004%
Typ
G = +2, R
L
= 150
Ω,
R
F
= 768
Ω
NTSC
0.007°
Typ
Differential phase
PAL
0.011°
Typ
DC PERFORMANCE
Open-loop transimpedance gain
V
O
= ±1 V, R
L
= 1 k
Ω
300
200
140
120
k
Ω
Min
Input offset voltage
±0.7
±3
±3.8
±4
mV
Max
Average offset voltage drift
±10
±13
µ
V/°C
Typ
Input bias current (inverting)
±13
±60
±80
±85
µ
A
Max
V
CM
= 0 V
Average bias current drift (–)
±300
±400
nA/°C
Typ
Input bias current (noninverting)
±14
±35
±45
±50
µ
A
Max
Average bias current drift (+)
±300
±400
nA/°C
Typ
4
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