Texas Instruments ISO35T Small EVM ISO35TEVM-434 ISO35TEVM-434 Datenbogen
Produktcode
ISO35TEVM-434
Circuit Layout and Bill of Materials
5
Circuit Layout and Bill of Materials
shows the silk screen as well as the top and bottom layers of the two-layer board, with the actual
dc-dc converter capturing an area of 20 mm
×
14 mm only.
Figure 5. Board Layout: Silk Screen (Left), Top Layer (Middle), Bottom Layer (Right)
shows a picture of the actual board.
Figure 6. Reference Design Board: Top View
shows the final bill of materials.
Table 2. Bill of Materials
Designator
Part No.
Manufacturer
Value
Package/Size
U1
ISO35T
TI
Full-duplex XCVR
DW-16
U2
TPS76333
TI
3.3-V LDO
DBV-5
D1, D2
MBR0520L
Fairchild
0.4-W Schottky diode
SOD123
C2, C3, C5
C0402C104K4RACTU
KEMET
0.1-
µ
F/16V/X7R (ceramic)
0402 (1
×
0,5 mm
2
)
C1, C4
GRM21BR61C106KE15L
Murata
10-
µ
F/16V/X5R (ceramic)
0805 (2
×
1,25 mm
2
)
C6
T491A475K016AT
KEMET
4.7-
µ
F/16V (tantalum)
3,2
×
1,6 mm
2
T1
DA2303-AL
Coilcraft
1:1.5
10
×
12 mm
2
J1, J2
MPT 0,5 / 6-2,54
Phoenix-Contact
6-position terminal block
6,2
×
15,7 mm
2
empty para
4
Isolated, Full-Duplex, 1-Mbps, 3.3-V to 3.3-V RS-485 Interface
SLUU470B
–
December 2010
–
Revised June 2011
Copyright
©
2010
–
2011, Texas Instruments Incorporated