Texas Instruments THS7373EVM Evaluation Module THS7373EVM THS7373EVM Datenbogen
Produktcode
THS7373EVM
100
10
1
0.1
0.01
100 k
1 G
Frequency (Hz)
OutputImpedance(
)
W
1 M
10 M
100 M
V = +3.3 V and +5 V
S
Filter Mode
Bypass Mode
0
10
20
30
40
50
60
70
-
-
-
-
-
-
-
100 k
1 G
Frequency (Hz)
S22,OutputReflectionRatio(dB)
1 M
10 M
100 M
V = +3.3 V and +5 V
S
Bypass Mode
Filter Mode
100
10
1
0.1
0.01
100 k
1 G
Frequency (Hz)
OutputImpedance(
)
W
1 M
10 M
100 M
V = +3.3 V and +5 V
S
0
10
20
30
40
50
60
70
-
-
-
-
-
-
-
100 k
1 G
Frequency (Hz)
S22,OutputReflectionRatio(dB)
1 M
10 M
100 M
V = +3.3 V and +5 V
S
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
-40
85
Ambient Temperature ( C)
°
MaximumOutputV
oltage(V)
-15
10
35
60
Load = 150
to GND
DC-Coupled Output
CVBS and HD Channels
CVBS and HD Channels
W
V = +5 V
S
V = +3.3 V
S
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-40
85
Ambient Temperature ( C)
°
MinimumOutputV
oltage(V)
-15
10
35
60
Load = 150
to GND
DC-Coupled Output
CVBS and HD Channels
CVBS and HD Channels
W
V = +5 V
S
V = +3.3 V
S
SBOS506A – DECEMBER 2009 – REVISED AUGUST 2012
TYPICAL CHARACTERISTICS: +3.3 V and +5 V
With load = 150
Ω
|| 10 pF, dc-coupled input and output, unless otherwise noted.
MAXIMUM OUTPUT VOLTAGE vs TEMPERATURE
MINIMUM OUTPUT VOLTAGE vs TEMPERATURE
Figure 2.
Figure 3.
CVBS CHANNEL S22 OUTPUT REFLECTION RATIO vs
CVBS CHANNEL OUTPUT IMPEDANCE vs FREQUENCY
FREQUENCY
Figure 4.
Figure 5.
HD CHANNELS S22 OUTPUT REFLECTION RATIO vs
HD CHANNELS OUTPUT IMPEDANCE vs FREQUENCY
FREQUENCY
Figure 6.
Figure 7.
12
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