Texas Instruments TAS5614LA and TAS5612LA Evaluation Module TAS5614LADDVEVM TAS5614LADDVEVM Datenbogen
Produktcode
TAS5614LADDVEVM
SLAS846 – MAY 2012
ELECTRICAL CHARACTERISTICS (continued)
PVDD_X = 36 V, GVDD_X = 12 V, VDD = 12 V, T
C
(Case temperature) = 75°C, f
S
= 384 kHz, unless otherwise specified.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OTE-OTW
differential
(1)
OTE-OTW differential
30
°C
A device reset is needed to clear
OTE
HYST
(1)
25
°C
FAULT after an OTE event
OLPC
Overload protection counter
f
PWM
= 384 kHz
2.6
ms
Resistor – programmable, nominal peak current in
I
OC
Overcurrent limit protection
15
A
1
Ω
load, ROC = 24 k
Ω
Resistor – programmable, nominal peak current in
I
OC_LATCHED
Overcurrent limit protection, latched
15
A
1
Ω
load, ROC = 62 k
Ω
Time from application of short condition to Hi-Z of
I
OCT
Overcurrent response time
150
ns
affected half bridge
Internal pulldown resistor at output of
Connected when RESET is active to provide
I
PD
3
mA
each half bridge
bootstrap charge. Not used in SE mode.
STATIC DIGITAL SPECIFICATIONS
V
IH
High level input voltage
1.9
V
INPUT_X, M1, M2, M3, RESET
V
IL
Low level input voltage
0.8
V
LEAKAGE
Input leakage current
100
μ
A
OTW / SHUTDOWN (FAULT)
Internal pullup resistance, OTW, CLIP,
R
INT_PU
20
26
33
k
Ω
FAULT to DVDD
V
OH
High level output voltage
Internal pullup resistor
3
3.3
3.6
V
V
OL
Low level output voltage
I
O
= 4mA
200
500
mV
FANOUT
Device fanout OTW, FAULT, CLIP
No external pullup
30
devices
10
Copyright © 2012, Texas Instruments Incorporated
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