Texas Instruments 12 Channel Gamma Buffer with Dual Memory Banks BUF12840EVM BUF12840EVM Datenbogen
Produktcode
BUF12840EVM
SBOS519A
–
OCTOBER 2010
–
REVISED JULY 2011
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
PACKAGE
PRODUCT
PACKAGE
DESIGNATOR
PACKAGE MARKING
TRANSPORT MEDIA, QUANTITY
BUF12840
VQFN-24
RGE
BUF12840
Tape and Reel, 3000
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at
device product folder at
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
BUF12840
UNIT
Supply Voltage
V
S
+22
V
Supply Voltage
V
SD
+6
V
Supply Input Terminals, SCL, SDA, A0, BKSEL, EA0, EA1, EN, LD: Voltage
–
0.5 to +6
V
Supply Input Terminals, SCL, SDA, A0, BKSEL, EA0, EA1, EN, LD: Current
±
10
mA
Output Short-Circuit
(2)
Continuous
Operating Temperature
–
40 to +95
°
C
Storage Temperature
–
65 to +150
°
C
Junction Temperature
T
J
+125
°
C
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
(2)
Short-circuit to ground. Exposed thermal die is soldered to the PCB using thermal vias. Refer to Texas Instruments application report
.
THERMAL INFORMATION
BUF12840
THERMAL METRIC
(1)
RGE
UNITS
24 PINS
θ
JA
Junction-to-ambient thermal resistance
35.6
θ
JC(top)
Junction-to-case(top) thermal resistance
40.5
θ
JB
Junction-to-board thermal resistance
10.0
°
C/W
ψ
JT
Junction-to-top characterization parameter
0.5
ψ
JB
Junction-to-board characterization parameter
9.9
θ
JC(bottom)
Junction-to-case(bottom) thermal resistance
3.0
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report,
2
Copyright
©
2010
–
2011, Texas Instruments Incorporated