Texas Instruments BQ2419X I²C Controlled 4.5A Single Cell USB / Adaptor Charger Evaluation Module BQ24195EVM-193 BQ24195EVM-193 Datenbogen
Produktcode
BQ24195EVM-193
SLUSB97 – OCTOBER 2012
THERMAL INFORMATION
RGE PACKAGE
THERMAL METRIC
(1)
UNITS
24-PIN
θ
JA
Junction-to-ambient thermal resistance
32.2
θ
JCtop
Junction-to-case (top) thermal resistance
29.8
θ
JB
Junction-to-board thermal resistance
9.1
°C/W
ψ
JT
Junction-to-top characterization parameter
0.3
ψ
JB
Junction-to-board characterization parameter
9.1
θ
JCbot
Junction-to-case (bottom) thermal resistance
2.2
space
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report,
ELECTRICAL CHARACTERISTICS
V
VBUS_UVLOZ
< V
VBUS
< V
ACOV
and V
VBUS
> V
BAT
+ V
SLEEP
, T
J
= –40°C to 125°C and T
J
= 25°C for typical values unless other
noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
QUIESCENT CURRENTS
V
VBUS
< V
UVLO
, VBAT = 4.2 V, leakage between
5
µA
BAT and VBUS
High-Z Mode, or no VBUS, BATFET disabled
I
BAT
Battery discharge current (BAT, SW, SYS)
12
20
µA
(REG07[5] = 1)
High-Z Mode, or no VBUS, REG07[5] = 0, –40°C –
32
55
µA
85°C
V
VBUS
= 5 V, High-Z mode
15
30
µA
V
VBUS
= 17 V, High-Z mode
30
50
µA
V
VBUS
> V
UVLO
, V
VBUS
> V
BAT
, converter not
1.5
3
mA
switching
I
VBUS
Input supply current (VBUS)
V
VBUS
> V
UVLO
, V
VBUS
> V
BAT
, converter switching,
4
mA
V
BAT
=3.2V, I
SYS
=0A
V
VBUS
> V
UVLO
, V
VBUS
> V
BAT
, converter switching,
15
mA
V
BAT
=3.8V, I
SYS
=0A
VBAT=4.2V, Boost mode, I
PMID
= 0A, converter
I
BOOST
Battery Discharge Current in boost mode
15
mA
switching
VBUS/BAT POWER UP
V
VBUS_OP
VBUS operating range
3.9
17
V
V
VBUS_UVLOZ
V
VBUS
rising
3.6
V
VBUS for active I
2
C, no battery
V
SLEEP
Sleep mode falling threshold
V
VBUS
falling, V
VBUS-VBAT
35
80
120
mV
V
SLEEPZ
Sleep mode rising threshold
V
VBUS
rising, V
VBUS-VBAT
170
250
300
mV
V
ACOV
VBUS over-voltage rising threshold
V
VBUS
rising
17.4
18
V
V
ACOV_HYST
VBUS Over-Voltage Falling Hysteresis
V
VBUS
falling
700
mV
V
BAT_UVLOZ
V
BAT
rising
2.3
V
Battery for active I
2
C, no VBUS
V
BAT_DPL
Battery depletion threshold
V
BAT
falling
2.4
2.6
V
V
BAT_DPL_HY
Battery depletion rising hysteresis
V
BAT
rising
170
230
mV
V
VBUSMIN
Bad adapter detection threshold
V
VBUS
falling
3.8
V
I
BADSRC
Bad adapter detection current source
30
mA
t
BADSRC
Bad source detection duration
30
ms
Copyright © 2012, Texas Instruments Incorporated
7
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