Texas Instruments 5Vout, 7W, IEEE 802.3-2005 Compliant, PD Controller, PS Controller EVM for TPS23753AEVM-001 TPS23753AE TPS23753AEVM-001 Datenbogen
Produktcode
TPS23753AEVM-001
TPS23753A
SLVS933B – JULY 2009 – REVISED JANUARY 2010
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
Unless otherwise noted: CS = APD = CTL = RTN, GATE open, R
FRS
= 60.4 k
Ω
, R
BLNK
= 249 k
Ω
, C
VB
= C
VC
= 0.1
m
F, R
DEN
=
24.9 k
Ω
, R
CLS
open, V
VDD-VSS
= 48 V, V
VDD1-RTN
= 48 V, 8.5 V
≤
V
VC-RTN
≤
18 V, –40°C
≤
T
J
≤
125°C
Controller Section Only
[V
[V
SS
= RTN and V
DD
= V
DD1
] or [V
SS
= RTN = V
DD
], all voltages referred to RTN. Typical specifications are at 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GATE
Source current
V
CTL
= V
B
, V
C
= 12 V, GATE high, Pulsed measurement
0.30
0.46
0.60
A
Sink current
V
CTL
= V
B
, V
C
= 12 V, GATE low, Pulsed measurement
0.50
0.79
1.1
A
APD
V
APDEN
V
APD
↑
1.42
1.5
1.58
Threshold voltage
V
V
APDH
Hysteresis
(2)
0.28
0.3
0.32
THERMAL SHUTDOWN
Turn off temperature
135
145
155
°C
Hysteresis
(3)
20
°C
(2)
The hysteresis tolerance tracks the rising threshold for a given device.
(3)
These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's
product warranty.
product warranty.
ELECTRICAL CHARACTERISTICS
PoE and Control
[V
[V
DD
= V
DD1
] or [V
DD1
= RTN], V
VC-RTN
= 0 V, all voltages referred to V
SS
. Typical specifications are at 25°C.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DEN (DETECTION)
(V
DD
= V
DD1
= RTN = V
SUPPLY
positive)
Measure I
SUPPLY
Detection current
V
DD
= 1.6 V
62
64.3
66.5
m
A
V
DD
= 10 V
399
406
413
Detection bias current
V
DD
= 10 V, DEN open, Measure I
SUPPLY
5.2
12
m
A
V
PD_DIS
Hotswap disable threshold
3
4
5
V
I
lkg
DEN leakage current
V
DEN
= V
DD
= 57 V, Float V
DD1
and RTN, Measure I
DEN
0.1
5
m
A
CLS (CLASSIFICATION)
(V
DD
= V
DD1
= RTN = V
SUPPLY
positive)
13 V
≤
V
DD
≤
21 V, Measure I
SUPPLY
R
CLS
= 1270
Ω
1.8
2.14
2.4
R
CLS
= 243
Ω
9.9
10.6
11.3
I
CLS
Classification current
mA
R
CLS
= 137
Ω
17.6
18.6
19.4
R
CLS
= 90.9
Ω
26.5
27.9
29.3
R
CLS
= 63.4
Ω
38
39.9
42
V
CL_ON
Regulator turns on, V
DD
rising
10
11.7
13
Classification regulator lower
V
threshold
V
CL_HYS
Hysteresis
(1)
1.9
2.05
2.2
V
CU_OFF
Regulator turns off, V
DD
rising
21
22
23
Classification regulator upper
V
threshold
V
CU_HYS
Hysteresis
(1)
0.5
0.77
1
I
lkg
Leakage current
V
DD
= 57 V, V
CLS
= 0 V, DEN = V
SS
, Measure I
CLS
1
m
A
RTN (PASS DEVICE)
(V
DD1
= RTN)
On resistance
0.7
1.2
Ω
Current limit
V
RTN
= 1.5 V, V
DD
= 48 V, Pulsed Measurement
405
450
505
mA
Inrush limit
V
RTN
= 2 V, V
DD
: 0 V
→
48 V, Pulsed Measurement
100
140
180
mA
Foldback voltage threshold
V
DD
rising
11
12.3
13.6
V
I
lkg
Leakage current
V
DD
= V
RTN
= 100 V, DEN = V
SS
40
m
A
UVLO
UVLO_R
V
DD
rising
33.9
35
36.1
Undervoltage lockout threshold
V
UVLO_H
Hysteresis
(1)
4.4
4.55
4.7
(1)
The hysteresis tolerance tracks the rising threshold for a given device.
4
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