Freescale Semiconductor Demonstration Board for Freescale MC9S08SE8 DEMO9S08EL32AUTO DEMO9S08EL32AUTO Datenbogen
Produktcode
DEMO9S08EL32AUTO
Appendix A Electrical Characteristics
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
Freescale Semiconductor
353
A.14
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
A.14.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
to the reported emissions levels.
10
C
EEPROM Program/erase endurance
3
T
L
to T
H
= –40
°C to + 0°C
T
L
to T
H
= 0
°C to + 125°C
T = 25
°C
n
EEPE
10,000
50,000
50,000
100,000
—
—
—
—
—
cycles
11
C
Data retention
4
t
D_ret
15
100
—
years
1
The frequency of this clock is controlled by a software setting.
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
calculating approximate time to program and erase.
3
Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
to 25
°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
Table A-17. Radiated Emissions, Electric Field
Parameter
Symbol
Conditions
Frequency
f
OSC
/f
BUS
Level
1
(Max)
Unit
Radiated emissions,
electric field
electric field
V
RE_TEM
V
DD
= 5.0V
T
A
= +25
o
C
package type
28 TSSOP
0.15 – 50 MHz
4MHz crystal
20MHz bus
11
dB
μV
50 – 150 MHz
12
150 – 500 MHz
3
500 – 1000 MHz
−10
IEC Level
N/A
—
SAE Level
2
—
Table A-16. Flash Characteristics (continued)
Num
C
Characteristic
Symbol
Min
Typical
Max
Unit