Atmel SAM4S-XPLD Atmel ATSAM4S-XPLD ATSAM4S-XPLD Datenbogen

 1041

SAM4S [DATASHEET]

11100E–ATARM–24-Jul-13

Note:

1. PA[4–11], PA[15–25], PB[0–9], PB[12–14], PC[0–31]

2. At power-up VDDIO needs to reach 0.6V before VDDIN reaches 1.0V

3. VDDIO voltage needs to be equal or below to (VDDIN voltage +0.5V)

4. The Flash programming characteristics are applicable at operating temperature range: T

A

 = -40°C to 85°C.

I

IH

Input High

Pull-down OFF

-1

—

1

μA

Pull-down ON

10

—

50

R

PULLUP

Pull-up Resistor

PA0–PA31, PB0–PB14, PC0–PC31

NRST

70

100

130

k

Ω

R

PULLDO

WN

Pull-down Resistor

PA0–PA31, PB0–PB14, PC0–PC31

NRST

70

100

130

k

Ω

R

ODT

On-die Series 
Termination Resistor

PA4–PA31, PB0–PB9, PB12–PB14, PC0–PC31

PA0-PA3

—

36

18

Ω

I

CC

Flash Active Current on 
VDDCORE

Random 144-bit Read @ 25°C :

Maximum read frequency onto VDDCORE = 
1.2V, VDDIO =3.3V 

—

16

25

mA

Random 72-bit Read @ 25°C:

Maximum read frequency onto VDDCORE = 
1.2V, VDDIO =3.3V  

—

10

18

Program 

onto VDDCORE = 1.2V, VDDIO = 

3.3V @ 25°C

—

3

5

I

CC33

Flash Active Current on 
VDDIO

Random 144-bit read:

Maximum read frequency onto VDDCORE = 
1.2V, VDDIO =3.3V  @ 25°C

—

3

16

mA

Random 72-bit read:

Maximum read frequency onto VDDCORE = 
1.2V, VDDIO =3.3V  @ 25°C

—

3

5

 onto VDDCORE = 1.2V, VDDIO = 

3.3V @ 25°C

—

10

15