Mikroelektronika MikroE Development Kits MIKROE-1103 Datenbogen
Produktcode
MIKROE-1103
DocID15274 Rev 7
37/104
STM32F105xx, STM32F107xx
Electrical characteristics
103
5.3.2 Operating
conditions
at power-up / power-down
Subject to general operating conditions for T
A
.
Table 10. Operating conditions at power-up / power-down
5.3.3
Embedded reset and power control block characteristics
The parameters given in
are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in
Symbol
Parameter
Conditions
Min
Max
Unit
t
VDD
V
DD
rise time rate
-
0
∞
µs/V
V
DD
fall time rate
20
∞
Table 11. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
PVD
Programmable voltage
detector level selection
detector level selection
PLS[2:0]=000 (rising edge)
2.1
2.18
2.26
V
PLS[2:0]=000 (falling edge)
2
2.08
2.16
V
PLS[2:0]=001 (rising edge)
2.19
2.28
2.37
V
PLS[2:0]=001 (falling edge)
2.09
2.18
2.27
V
PLS[2:0]=010 (rising edge)
2.28
2.38
2.48
V
PLS[2:0]=010 (falling edge)
2.18
2.28
2.38
V
PLS[2:0]=011 (rising edge)
2.38
2.48
2.58
V
PLS[2:0]=011 (falling edge)
2.28
2.38
2.48
V
PLS[2:0]=100 (rising edge)
2.47
2.58
2.69
V
PLS[2:0]=100 (falling edge)
2.37
2.48
2.59
V
PLS[2:0]=101 (rising edge)
2.57
2.68
2.79
V
PLS[2:0]=101 (falling edge)
2.47
2.58
2.69
V
PLS[2:0]=110 (rising edge)
2.66
2.78
2.9
V
PLS[2:0]=110 (falling edge)
2.56
2.68
2.8
V
PLS[2:0]=111 (rising edge)
2.76
2.88
3
V
PLS[2:0]=111 (falling edge)
2.66
2.78
2.9
V
V
PVDhyst
PVD hysteresis
-
-
100
-
mV
V
POR/PDR
Power on/power down
reset threshold
reset threshold
Falling edge
1.8
(1)
1.
The product behavior is guaranteed by design down to the minimum V
POR/PDR
value.
1.88
1.96
V
Rising edge
1.84
1.92
2.0
V
V
PDRhyst
PDR hysteresis
-
-
40
-
mV
T
RSTTEMPO
(2)
2.
Guaranteed by design, not tested in production.
Reset temporization
-
1
2.5
4.5
ms