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Fairchild Semiconductor N/A BC 557 A PNP Case type TO 92 I(C BC557BTA Datenbogen

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BC557BTA
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BC5
56/557
/558/559/560 — 
PNP 
Epit
axial Silicon T
ransistor
© 2012 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
BC556/557/558/559/560 Rev. B0
1 
October 2012
BC556/557/558/559/560
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High Voltage: BC556, V
CEO 
= -65V
• Low Noise: BC559, BC560
•
Complement to BC546 ... BC 550
Absolute Maximum Ratings 
 T
a
 = 25°C unless otherwise noted
Electrical Characteristics  
T
a 
= 25
C unless otherwise noted
 
h
FE 
Classification
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage                 
: BC556 
: BC557/560
: BC558/559 
-80
-50
-30
V
V
V
V
CEO
Collector-Emitter Voltage
: BC556 
: BC557/560
: BC558/559
-65
-45
-30
V
V
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current (DC)
-100
mA
P
C
Collector Power Dissipation
500
mW
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
-65 ~ 150
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
I
CBO
Collector Cut-off Current
V
CB
= -30V, I
E
=0
-15
nA
h
FE
DC Current Gain
V
CE
= -5V, I
C
=2mA
110
800
V
CE
(sat)
Collector-Emitter Saturation  Volt-
age
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-90
-250
-300
-650
mV
mV
V
BE
(sat)
Collector-Base Saturation Voltage
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-700
-900
mV
mV
V
BE
(on)
Base-Emitter On Voltage
             
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
-600
-660
-750
-800
mV
mV
f
T
Current Gain Bandwidth Product
V
CE
= -5V, I
C
= -10mA, 
f=10MHz
150
MHz
C
ob
Output Capacitance
V
CB
= -10V, I
E
=0, f=1MHz
6
pF
NF
Noise Figure   : BC556/557/558
: BC559/560
: BC559
: BC560
V
CE
= -5V, I
C
= -200
A
f=1KHz, R
G
=2K
V
CE
= -5V, I
C
= -200
A
R
G
=2K
f=30~15000MHz
2
1
1.2
1.2 
10
4
4
2
dB
dB
dB
dB
Classification
A
B
C
h
FE
110 ~ 220
200 ~ 450
420 ~ 800
1. Collector   2. Base   3. Emitter
TO-92
1