Fairchild Semiconductor N/A BC856CMTF Datenbogen

©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BC856- BC860 Rev. B

tm

August 2006

• Switching and Amplifier Applications

• Suitable for automatic insertion in thick and thin-film circuits

• Low Noise: BC859, BC860

• Complement to BC846 ... BC850

 

 
 
 

T

a

 = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

T

a

=25

°C unless otherwise noted 

* Pulse Test: Pulse Width

≤300µs, Duty Cycle≤2%

V

CBO

Collector-Base Voltage                    

: BC856
: BC857/860
: BC858/859

-80
-50
-30

V
V
V

V

CEO

Collector-Emitter Voltage     

: BC856
: BC857/860
: BC858/859

-65
-45
-30

V
V
V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current (DC)

-100

mA

P

C

Collector Power Dissipation

310

mW

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature

-65 ~ 150

°C

I

CBO

Collector Cut-off Current

V

CB

= -30V, I

E

=0

-15

nA

h

FE

DC Current Gain

V

CE

= -5V, I

C

= -2mA

110

800

V

CE 

(sat)

Collector-Emitter Saturation Voltage I

C

= -10mA, I

B

= -0.5mA

I

C

= -100mA, I

B

= -5mA

-90

-250

-300
-650

mV
mV

V

BE 

(sat)

Base-Emitter Saturation Voltage

I

C

= -10mA, I

B

= -0.5mA

I

C

= -100mA, I

B

= -5mA

-700
-900

mV
mV

V

BE 

(on)

Base-Emitter On Voltage

V

CE

= -5V, I

C

= -2mA

V

CE

= -5V, I

C

= -10mA

-600

-660

-750
-800

mV
mV

f

T

Current Gain Bandwidth Product

V

CE

= -5V, I

C

= -10mA

f=100MHz

150

MHz

C

ob

Output Capacitance

V

CB

= -10V, I

E

=0, f=1MHz

6

pF

NF

Noise Figure     

        

: BC856/857/858

      : BC859/860

V

CE

= -5V, I

C

= -200

µA

R

G

=2K

Ω, f=1KHz

2
1

10

4

dB
dB

      : BC859
      : BC860

V

CE

= -5V, I

C

= -200

µA

R

G

=2K

Ω, f=30~15000Hz

1.2
1.2 

4
2

dB
dB 

1. Base   2. Emitter   3. Collector

SOT-23

1

2

3