Fairchild Semiconductor N/A BCW71 Datenbogen



1997 Fairchild Semiconductor Corporation

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TA = 25°C unless otherwise noted

P

D

Total Device Dissipation

Derate above 25

°

C

350

2.8

mW

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

357

°

C/W

V

CEO

Collector-Emitter Voltage

45

V

V

CES

Collector-Base Voltage

50

V

V

EBO

Emitter-Base Voltage

5.0

V

I

C

Collector Current - Continuous

500

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

This device is designed for general purpose amplifier
applications at collector currents to 300 mA. Sourced from
Process 10.

*

Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.