Fairchild Semiconductor N/A BCP69 Datenbogen

©2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BCP69 Rev. B

January 2007

• This device is designed for general purpose medium power amplifiers 

 

and switches requiring collector currents to 1.0A.

• Sourced from Process 77.

 

 
 

T

a

=25

°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150

°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

a

=25

°C unless otherwise noted

* Device mounted on FR-4 PCB 36mm 

× 18mm × 1.5mm; mounting pad for the collector lead min. 6cm

2

T

a

 = 25°C unless otherwise noted

* Pulse Test: Pulse Width 

≤ 300µs, Duty Cycle ≤ 2.0%

V

CEO

Collector-Emitter Voltage

-20

V

V

CBO

Collector-Base Voltage

-30

V

V

EBO

Emitter-Base Voltage

-5.0

V

I

C

Collector Current

- Continuous

-1.5

A

T

J

Junction Temperature 

150

°C

T

STG

Storage Temperature Range

- 55 ~ +150

°C

P

D

Total Device Dissipation
Derate above 25

°C

1.0
8.0

W

mW/

°C

R

θJA

Thermal Resistance, Junction to Ambient

125

°C/W

BV

CEO

Collector-Emitter Breakdown Voltage 

I

C

 = -10mA, I

B

 = 0

-20

V

BV

CBO

Collector-Base Breakdown Voltage 

I

C

 = -1.0mA, I

E

 = 0

-30

V

BV

EBO

Emitter-Base Breakdown Voltage 

I

E

 = -100

µA, I

C

 = 0

-5.0

V

I

CBO

Collector-Base Cutoff Current

V

CB

 = -25V, I

E

 = 0

V

CB

 = -25V, I

E

 = 0, T

j

 = 150

o

C

-100

-10

nA
uA

I

EBO

Emitter-Base Cutoff Current

V

EB

 = -5.0V, I

C

 = 0

-100

nA

h

FE

DC Current Gain 

I

C

 = -5mA, V

CE

 = -1.0V

 

I

C

 = -500mA, V

CE

 = -1.0V

 

I

C

 = -1.0A, V

CE

 = -1.0V

50
85
60

375

V

CE(sat)

Collector-Emitter Saturation Voltage 

I

C

 = -1.0A, I

B

 = -100mA  

-0.5

V

V

BE(on)

Base-Emitter On Voltage 

I

C

 = -1.0A, V

CE

 = -1.0V

-1.0

V

C

cb

Collector-Base Capacitance

V

CB

 = -10V, I

E

 = 0, f = 1.0MHz

30

pF

h

fe

Small-Signal Current Gain

I

C

 = -50mA, V

CE

 = -10V, f = 20MHz

2.5

SOT-223

1

2

4

3

1. Base  2. Collector   3. Emitter