Fairchild Semiconductor N/A BCW68G Datenbogen

© 1997 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BCW68G Rev. 1.1.0

1 

March 2014

(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T

A

 = 25°C unless otherwise noted.

1. These ratings are based on a maximum junction temperature of 150

°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or 

    low-duty-cycle operations.

BCW68G

DG

SOT-23 3L

Tape and Reel

V

CEO

Collector-Emitter Voltage

-45

V

V

CBO

Collector-Base Voltage

-60

V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current - Continuous

-800

mA

T

J , 

T

STG

Junction and Storage Temperature Range

-55 to +150

°C

This device is designed for general-purpose amplifier
and switching applications at currents to 500 mA.
Sourced from process 63.