Fairchild Semiconductor N/A 2N6517TA Datenbogen
Produktcode
2N6517TA
2N6517 — NPN Epit
axial Silicon T
ransistor
© 2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N6517 Rev. B1
1
August 2010
2N6517
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Features
• High Voltage Transistor
• Collector Dissipation: P
• Collector Dissipation: P
C
(max) = 625mW
• Complement to 2N6520
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage
2N6517
2N6517C
350
400
400
V
V
V
V
CEO
Collector-Emitter Voltage
2N6517
2N6517C
350
400
400
V
V
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current
500
mA
P
C
Collector Power Dissipation
625
mW
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
-55 ~ 150
°C
Symbol
Parameter
Conditions
Min.
Max.
Units
BV
CBO
Collector-Base Breakdown Voltage
2N6517
2N6517C
2N6517
2N6517C
I
C
= 100
µA, I
E
= 0
I
C
= 100
µA, I
E
= 0
350
400
400
V
V
V
BV
CEO
Collector-Emitter Breakdown Voltage *
2N6517
2N6517C
2N6517
2N6517C
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
350
400
400
V
V
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µA, I
C
= 0
6
V
I
CBO
Collector Cut-off Current
V
CB
= 250V, I
E
= 0
50
nA
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
50
nA
h
FE
DC Current Gain *
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517/2N6517C
2N6517C
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 30mA
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 5mA
20
30
30
20
15
50
30
30
20
15
50
200
200
200
200
1. Emitter 2. Base 3. Collector
TO-92
1