Fairchild Semiconductor N/A BC850AMTF Datenbogen

© 2011 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

BC846 - BC850 Rev. B1

1 

April 2011

• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850

•

Complement to BC856 ... BC860

 T

a

 = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

T

a 

= 25

°C unless otherwise noted

* Pulse Test: Pulse Width

≤300μs, Duty Cycle≤2%

V

CBO

Collector-Base Voltage     

 

: BC846

      : BC847/850
      : BC848/849

80
50
30

V
V
V

V

CEO

Collector-Emitter Voltage  

 

: BC846

      : BC847/850
      : BC848/849

65
45
30

V
V
V

V

EBO

Emitter-Base Voltage        

 

: BC846/847

      : BC848/849/850

6
5

V
V

I

C

Collector Current (DC)

100

mA

P

C

Collector Power Dissipation

310

mW

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature

-65 to 150

°C

I

CBO

Collector Cut-off Current

V

CB

=30V, I

E

=0

15

nA

h

FE

DC Current Gain

V

CE

=5V, I

C

=2mA

110

800

V

CE  

(sat) Collector-Emitter Saturation Voltage I

C

=10mA, I

B

=0.5mA

I

C

=100mA, I

B

=5mA

90

200

250
600

mV
mV

V

BE  

(sat) Collector-Base Saturation Voltage

I

C

=10mA, I

B

=0.5mA

I

C

=100mA, I

B

=5mA

700
900

mV
mV

V

BE  

(on)

Base-Emitter On Voltage

V

CE

=5V, I

C

=2mA

V

CE

=5V, I

C

=10mA

580

660

700
720

mV
mV

f

T

Current Gain Bandwidth Product

V

CE

=5V, I

C

=10mA, f=100MHz

300

MHz

C

ob

Output Capacitance

V

CB

=10V, I

E

=0, f=1MHz

3.5

6

pF

C

ib

Input Capacitance

V

EB

=0.5V, I

C

=0, f=1MHz

9

pF

NF

Noise Figure     
      : BC846/847/848
      : BC849/850

V

CE

= 5V, I

C

= 200

μA

R

G

=2K

Ω, f=1KHz

2

1.2

10

4

dB
dB

      : BC849
      : BC850

V

CE

= 5V, I

C

= 200

μA

R

G

=2K

Ω, f=30~15000Hz

1.4
1.4 

4
3

dB
dB 

1. Base   2. Emitter   3. Collector

SOT-23

1

2

3