Fairchild Semiconductor N/A BC81840MTF Datenbogen

©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

BC817/BC818 Rev. B

tm

November 2006

• Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages

• Complement to BC807/ BC808

 

 
 
 

T

a

 = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

T

a

=25

°C unless otherwise noted 

* Pulse Test: Pulse Width

≤300µs, Duty Cycle≤2%

V

CBO

Collector-Base Voltage      

  : BC817
  : BC818

50
30

V
V

V

CEO

Collector-Emitter Voltage   

  : BC817
  : BC818

45
25

V
V

V

EBO

Emitter-Base Voltage        

5

V

I

C

Collector Current (DC)

800

mA

P

C

Collector Power Dissipation

310

mW

T

J

Junction Temperature

150

°C

T

STG

Storage Temperature

-65 ~ 150

°C

BV

CEO

Collector-Emitter Breakdown Voltage

: BC817
: BC818

I

C

=10mA, I

B

=0

45
25

V
V

BV

CES

Collector-Emitter Breakdown Voltage

: BC817
: BC818

I

C

=0.1mA, V

BE

=0

50
30

V
V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

=0.1mA, I

C

=0

5

V

I

CES

Collector Cut-off Current

V

CE

=25V, V

BE

=0

100

nA

I

EBO

Emitter Cut-off Current

V

EB

=4V, I

C

=0

100

nA

h

FE1

h

FE2

DC Current Gain

V

CE

=1V, I

C

=100mA

V

CE

=1V, I

C

=300mA

100

60

630

V

CE  

(sat)

Collector-Emitter Saturation Voltage

I

C

=500mA, I

B

=50mA

0.7

V

V

BE  

(on)

Base-Emitter On Voltage

V

CE

=1V, I

C

=300mA

1.2

V

f

T

Current Gain Bandwidth Product

V

CE

=5V, I

C

=10mA

f=50MHz

100

MHz

C

ob

Output Capacitance

V

CB

=10V, f=1MHz

12

pF

1. Base   2. Emitter   3. Collector

SOT-23

1

2

3