Fairchild Semiconductor N/A BC847S Datenbogen

This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 07.

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

V

CEO

Collector-Emitter Voltage

45

V

V

CES

Collector-Base Voltage

50

V

V

CBO

Collector-Base Voltage

50

V

V

EBO

Emitter-Base Voltage

6.0

V

I

C

Collector Current - Continuous

200

mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C



2001 Fairchild Semiconductor Corporation                                                                                                                                                Rev.A1

T

A

 = 25°C unless otherwise noted

T

A

 = 25°C unless otherwise noted

P

D

Total Device Dissipation

Derate above 25

°

C

300

2.4

mW

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

415

°

C/W

NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable.  Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.