Fairchild Semiconductor N/A BCV27 Datenbogen
Produktcode
BCV27
3
1997 Fairchild Semiconductor Corporation
BCV27
C
B
E
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
TA = 25°C unless otherwise noted
BCV27
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
30
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
10
V
I
C
Collector Current - Continuous
1.2
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Symbol
Characteristic
Max
Units
*BCV27
P
D
Total Device Dissipation
Derate above 25
°
C
350
2.8
mW
mW/
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
357
°
C/W
SOT-23
Mark: FF
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.