Fairchild Semiconductor N/A BC32725TA Datenbogen

©2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002

T

a

=25

°

C unless otherwise noted 

T

a

=25

°

C unless otherwise noted 

V

CES

Collector-Emitter Voltage                 

: BC327 
: BC328

-50
-30

V
V

V

CEO

Collector-Emitter Voltage

: BC327 
: BC328

-45
-25

V
V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current (DC)

-800

mA

P

C

Collector Power Dissipation

625

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-55 ~ 150

°

C

BV

CEO

Collector-Emitter Breakdown Voltage

: BC327 
: BC328

I

C

= -10mA, I

B

=0

-45
-25

V
V

BV

CES

Collector-Emitter Breakdown Voltage

: BC327 
: BC328

I

C

= -0.1mA, V

BE

=0

-50
-30

V
V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

= -10

µ

A, I

C

=0

-5

V

I

CES

Collector Cut-off Current

: BC327
: BC328

V

CE

= -45V, V

BE

=0

V

CE

= -25V, V

BE

=0

   

-2
-2

-100
-100

nA
nA

h

FE1

h

FE2

DC Current Gain   
             

V

CE

= -1V, I

C

= -100mA

V

CE

= -1V, I

C

= -300mA

100         

40                                 

630

V

CE 

(sat)

Collector-Emitter Saturation Voltage

I

C

= -500mA, I

B

= -50mA

-0.7

V

V

BE  

(on)

Base-Emitter On Voltage

V

CE

= -1V, I

C

= -300mA

-1.2

V

f

T

Current Gain Bandwidth Product

V

CE

= -5V, I

C

= -10mA, f=20MHz

100

MHz

C

ob

Output Capacitance

V

CB

= -10V, I

E

=0, f=1MHz

12

pF

Classification

16

25

40

h

FE1

100 ~ 250

160 ~ 400

250 ~ 630

h

FE2

60-

100-

170-

• Suitable for AF-Driver stages and low power output stages
• Complement to BC337/BC338

1. Collector   2. Base   3. Emitter

TO-92

1