Fairchild Semiconductor N/A BC80740MTF Datenbogen

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

T

a

=25

°

C unless otherwise noted 

T

a

=25

°

C unless otherwise noted 

V

CES

Collector-Emitter Voltage     

: BC807            
: BC808

-50
-30

V
V

V

CEO

Collector-Emitter Voltage     

: BC807
: BC808

-45
-25

V
V

V

EBO

Emitter-Base Voltage

-5

V

I

C

Collector Current (DC)

-800

mA

P

C

Collector Power Dissipation

-310

mW

T

J

Junction Temperature

150

°

C

T

STG

Storage Temperature

-65 ~ 150

°

C

BV

CEO

Collector-Emitter Breakdown Voltage

: BC807
: BC808

I

C

= -10mA, I

B

=0

-45
-25

V
V

BV

CES

Collector-Emitter Breakdown Voltage

: BC807
: BC808

I

C

= -0.1mA, V

BE

=0

-50
-30

V
V

BV

EBO

Emitter-Base Breakdown Voltage

I

E

= -0.1mA, I

C

=0

-5

V

I

CES

Collector Cut-off Current

V

CE

= -25V, V

BE

=0

-100

nA

I

EBO

Emitter Cut-off Current

V

EB

= -4V, I

C

=0

-100

nA

h

FE1

h

FE2

DC Current Gain

V

CE

= -1V, I

C

= -100mA

V

CE

= -1V, I

C

= -300mA

100

60

630

V

CE 

(sat)

Collector-Emitter Saturation Voltage

I

C

= -500mA, I

B

= -50mA

-0.7

V

V

BE 

(on)

Base-Emitter On Voltage

V

CE

= -1V, I

C

= -300mA

-1.2

V

f

T

Current Gain Bandwidth Product

V

CE

= -5V, I

C

= -10mA

f=50MHz

100

 

MHz

C

ob

Output Capacitance

V

CB

= -10V, f=1MHz

12

pF

• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818

SOT-23

1. Base  2. Emitter  3. Collector 

1

2

3