Fairchild Semiconductor N/A 2SC5200OTU Datenbogen

Produktcode
2SC5200OTU
Seite von 6
2SC5200/FJL4315 — NPN Epit
axial Silicon T
ransistor
© 2009 Fairchild Semiconductor Corporation
  www.fairchildsemi.com
2SC5200/FJL4315 Rev. C
January 2009
2SC5200/FJL4315
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier
• General Purpose Power Amplifier  
Features
• High Current Capability: I
C
 = 17A.
• High Power Dissipation : 150watts.
• High Frequency : 30MHz.
• High Voltage : V
CEO
=250V
• Wide S.O.A for reliable operation.
• Excellent Gain Linearity for low THD.
• Complement to 2SA1943/FJL4215.
• Thermal and electrical Spice models are available.
• Same transistor is also available in:
 
 -- TO3P package, 2SC5242/FJA4313 : 130 watts
 
 -- TO220 package, FJP5200 : 80 watts
 
 -- TO220F package,  FJPF5200  :  50 watts
Absolute Maximum Ratings*  
T
a
 = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*  
T
a
=25
°C unless otherwise noted
* Device mounted on minimum pad size
h
FE
 Classification
Symbol
Parameter
Ratings
Units
BV
CBO
Collector-Base Voltage
250
V
BV
CEO
Collector-Emitter Voltage
250
V
BV
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current(DC)
17
A
I
B
Base Current
1.5
A
P
D
Total Device Dissipation(T
C
=25
°C)
Derate above 25
°C
150
1.04
W
W/
°C
T
J
, T
STG
Junction and Storage Temperature
- 50 ~ +150
°C
Symbol
Parameter
Max.
Units
R
θJC
Thermal Resistance, Junction to Case
0.83
°C/W
Classification
R
O
h
FE1
55 ~ 110
80 ~ 160
1.Base   2.Collector   3.Emitter
1
TO-264