Fairchild Semiconductor N/A BC516_D27Z Datenbogen

©2002 Fairchild Semiconductor Corporation

Rev. A1, August 2002

TO-92

T

A

=25

°

C unless otherwise noted

T

A

=25

°

C unless otherwise noted

NOTES:
1. Pulse Test Pulse Width 

≤

 2%

2. f

T

 = Ih

fe

I · f

test

T

A

=25

°

C unless otherwise noted

V

CEO

Collector-Emitter Voltage

30

V

V

CBO

Collector-Base Voltage

40

V

V

EBO

Emitter-Base Voltage

10

V

I

C

Collector Current

- Continuous

1

A

P

D

Total Power Dissipation 

T

A

 = 25

°

C

625

mW

T

J

, T

STG

Operating and Storage Junction Temperature Range

-55 ~ +150

°

C

V

CEO

Collector-Emitter Breakdown Voltage

I

C

 = 2mA, I

B

 = 0

30

V

V

CBO

Collector-Base Breakdown Voltage

I

C

 = 100

µ

A, I

E

 = 0

40

V

V

EBO

Emitter-Base Breakdown Voltage

I

E

 = 10

µ

A, I

C

 = 0

10

V

I

CBO

Collector Cutoff Current

V

CB

 = 30V, I

E

 = 0

100

nA

h

FE

DC Current Gain

I

C

 = 20mA, V

CE

 = 2V

30,00

0

V

CE

(sat)

Collector-Emitter Saturation Voltage

I

C

 = 100mA, I

B

 = 0.1mA

1

V

V

BE

(on)

Base-Emitter On Voltage

I

C

 = 10mA, V

CE

 = 5V

1.4

V

f

T

Current Gain Bandwidth Product (2)

I

C

 = 10mA, V

CE

 = 5V, f = 100MHz

200

MH

Z

R

θ

JA

Thermal Resistance, Junction to Ambient

200

°

C/W

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

• This device is designed for applications reguiring extremely high 

current gain at currents to 1mA.

• Sourced from process 61.

1. Collector  2. Base   3. Emitter

1