Fairchild Semiconductor N/A 2N4401TF Datenbogen

This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA.

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

V

CEO

Collector-Emitter Voltage

40

V

V

CBO

Collector-Base Voltage

60

V

V

EBO

Emitter-Base Voltage

6.0

V

I

C 

Collector Current - Continuous 600                           mA

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

TA = 25°C unless otherwise noted

P

D

Total Device Dissipation

Derate above 25

°

C

625

5.0

350

2.8

mW

mW/

°

C

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

200

357

°

C/W

*

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 

2001 Fairchild Semiconductor Corporation

2N4401/MMBT4401, Rev A